Semiconductor Insertion Layer for Oxygen Vacancy Repair
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Solution Overview
Problem
As semiconductor devices scale down, existing manufacturing processes are inadequate in addressing oxygen vacancies in gate dielectric layers, leading to performance issues such as non-uniformity and yield reduction due to affected threshold voltage and work function values.
Innovation Solution
Incorporating a metal oxide insertion layer between the interfacial and gate dielectric layers, made of a material with a higher oxygen content than the gate dielectric layer, to complement oxygen vacancies and maintain optimal dielectric constants, thereby stabilizing the gate structure's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device scaling-down continues, then device density and integration increase, but oxygen vacancies in gate dielectric layers cause non-uniformity and yield reduction
Solution Approach 1:
An insertion layer made of metal oxide with high oxygen content (such as HfO2, Al2O3, or TiO2) is introduced between the interfacial layer and the gate dielectric layer. This insertion layer acts as an oxygen source that diffuses into the gate dielectric layer to fill oxygen vacancies, thereby improving threshold voltage uniformity and device reliability while maintaining high device density
Solution Approach 2:
The invention changes the oxygen concentration parameter by introducing a material with significantly higher oxygen content (metal oxide insertion layer) adjacent to the gate dielectric layer. This parameter change enables oxygen diffusion to occur, filling vacancies and stabilizing the electrical properties of the gate dielectric layer during device operation
2Ease of manufacture
If gate dielectric layer is used without insertion layer, then manufacturing process is simpler, but oxygen vacancies affect work function values and device performance
Solution Approach 1:
The insertion layer is formed in advance during the gate stack fabrication process, positioned between the interfacial layer and gate dielectric layer. This preliminary placement of oxygen-rich material enables subsequent oxygen diffusion to occur during standard annealing processes, thereby pre-conditioning the gate dielectric layer to maintain stable work function values without requiring additional post-processing steps
3Manufacturing precision
If metal oxide insertion layer is added, then oxygen vacancies are repaired and uniformity improves, but device structure becomes more complex
Solution Approach 1:
The insertion layer is strategically positioned only at the critical interface region between the interfacial layer and gate dielectric layer, where oxygen vacancies most significantly impact device performance. This localized approach provides targeted oxygen supply to the most vulnerable region without unnecessarily complicating the entire device structure, maintaining relatively simple overall architecture while achieving improved uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insertion layer improves the uniformity and reliability of semiconductor structures by repairing oxygen vacancies, enhancing the control over threshold voltage and work function values, and increasing manufacturing yield.
Implementation Method 1
the oxygen in the insertion layer can complement the oxygen vacancy in the gate dielectric layer
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. The insertion layer and the gate dielectric layer may be metal oxides where the insertion layer has an oxygen coordination number greater than the gate dielectric layer.