Semiconductor Inspection via Electron and Laser Beam Merging
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Solution Overview
Problem
Electron-beam-absorbed current (EBAC) techniques are limited in detecting defects in deep layers of semiconductor devices as the electron beam cannot reach these layers, making it difficult to identify faults in integrated circuits.
Innovation Solution
An inspection device that combines an electron emitter and a laser emitter to generate electrical signals in semiconductor samples, where the electron beam induces current in surface layers and the laser beam penetrates deeper to induce a photovoltaic effect, allowing for the detection of defects in both surface and deep layers through a conductive probe.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electron beam is used for inspection, then surface layer defects can be detected, but deep layer defects cannot be detected
Solution Approach 1:
The patent combines electron beam inspection and laser beam inspection into a single integrated system. The electron emitter generates electron beams for surface layer inspection, while the laser emitter generates laser beams for deep layer inspection. Both beams are directed at the same sample through a shared stage and chamber system, merging two inspection methods into one comprehensive device that can detect defects at all depths.
Solution Approach 2:
The inspection device is designed with multi-functionality to perform both electron-beam-absorbed current (EBAC) inspection and laser beam-induced current (LBIC) inspection. The system can selectively activate either the electron emitter or the laser emitter depending on the inspection depth required, making the device universally applicable for both surface and deep layer defect detection in semiconductor devices.
2Reliability
If only electron beam inspection is used, then the inspection system remains simple, but deep layer defects remain undetectable
Solution Approach 1:
The patent merges electron beam inspection and laser beam inspection capabilities within a single integrated device. The system includes both an electron emitter and a laser emitter that can be selectively activated. This combination enhances reliability by ensuring both surface and deep layer defects can be detected, while the shared chamber and stage infrastructure helps manage the overall system complexity.
3Length of stationary object
If laser beam is added to the inspection system, then deep layer defects can be detected, but the device complexity increases
Solution Approach 1:
The inspection device achieves multi-functionality by integrating both electron beam and laser beam capabilities. The laser emitter is added to enable deep layer inspection through laser beam-induced current, while the system maintains a shared chamber, stage, and control infrastructure. This approach allows the device to perform multiple inspection functions without proportionally increasing complexity, as both beam types utilize common supporting systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the detection of defects in deep layers of semiconductor devices by combining electron-beam-induced and laser-beam-induced currents, providing comprehensive information on the integrity of conductive structures within the sample.
Implementation Method 1
EBAC involves using an electron beam to inject electrical charges into a semiconductor device. A portion of the electrical charges may be absorbed by the semiconductor device. EBAC involves measuring the current flow in the semiconductor device to generate an image based on the measured current.
Implementation Method 2
The laser emitter may be configured to emit a laser beam towards the stage, to generate a second electrical signal in the sample
Data Source
AI summary
According to various embodiments, an inspection device may include a chamber, a stage provided within the chamber, an electron emitter, a laser emitter, and a conductive probe. The stage may be configured to hold a sample. The electron emitter may be configured to emit an electron beam towards the stage, to generate a first electrical signal in the sample. The laser emitter may be configured to emit a laser beam towards the stage, to generate a second electrical signal in the sample. The conductive probe may be configured to receive from the conductive structure, at least one of the first electrical signal and the second electrical signal.