Semiconductor Insulated Extension for BEOL Yield

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Solution Overview

Problem

As semiconductor devices scale down, the increased density of conductive structures leads to higher probabilities of short circuits and cross talk during back-end-of-line (BEOL) processing, resulting in decreased yield due to conductive extensions formed during processing.

Innovation Solution

Implementing an insulation process that transforms conductive extensions into insulated extensions by exposing them to an oxidizing or nitriding gas or plasma, reducing their conductivity and increasing resistivity, thereby minimizing undesirable conductive reach and preventing short circuits or cross talk.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If device density increases and geometry sizes decrease, then production efficiency increases and costs decrease, but short circuits and cross talk occur during BEOL processing, resulting in decreased yield

Engineering Contradiction:
Improveproduction efficiencyVSAvoidyield
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by performing an insulation process on conductive extensions before they can cause short circuits or cross talk during subsequent BEOL processing. The insulation process transforms conductive extensions into insulated extensions, preventing future harmful electrical coupling between conductive structures.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful conductive extensions (which cause short circuits and cross talk) into beneficial insulated extensions through oxidation or nitriding. The harmful conductive material is transformed into a beneficial insulating layer that prevents electrical coupling and improves yield.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Ease of manufacture

If conventional fabrication techniques are used, then manufacturing simplicity is maintained, but conductive extensions cause short circuits and cross talk, reducing yield

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidyield
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the electrical parameter of the conductive extensions by exposing them to oxidizing or nitriding gases, transforming them from conductive to insulating state. This parameter change eliminates the harmful electrical coupling while maintaining manufacturing simplicity through integration into existing BEOL processes.

Inventive Principle:
Principle #35Parameter changes

3Quantity of substance

If device scale decreases, then functional density increases, but conductive extensions formed during processing cause more frequent short circuits and cross talk

Engineering Contradiction:
Improvefunctional densityVSAvoidshort circuits and cross talk
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent extracts the harmful conductive property from the extensions by transforming them into insulating structures through oxidation or nitriding. This removes the harmful factor of electrical coupling while preserving the physical presence of the extensions for structural support.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces oxidizing or nitriding gases as intermediaries that transform the conductive extensions into insulated extensions. These intermediary substances enable the transformation without requiring direct contact or complex processing steps.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The insulation process effectively reduces the conductivity of conductive extensions, enhancing the non-conductive separation between structures and increasing yield rates by preventing undesirable electrical coupling, thus improving the reliability of BEOL processing.

Implementation Method 1

exposing them to an oxidizing or nitriding gas or plasma

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 2

exposing them to an oxidizing or nitriding gas or plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS11705393B2Semiconductor device extension insulation
Publication Date: 2023.07.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11705393B2 patent drawing
  • US11705393B2 patent drawing
  • US11705393B2 patent drawing

AI summary

A semiconductor device includes: a plurality of vertical conductive structures, wherein each of the plurality of vertical conductive structures extends through an isolation layer; and an insulated extension disposed horizontally between a first one and a second one of the plurality of vertical conductive structures.