Semiconductor Device Insulated Through-Hole Wiring

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Solution Overview

Problem

Existing semiconductor devices with complex three-dimensional wiring structures face challenges in securing insulating properties and efficient wire bonding, leading to increased production costs and dimension issues due to the need for large through holes in the upper substrate, which complicates the sealing and electrical coupling of sensor elements.

Innovation Solution

A semiconductor device comprising a first and second semiconductor substrate attached with insulated holes filled with a conductive member, allowing for hermetic sealing and stable electrical coupling of elements, reducing the need for bonding wires and enhancing the design flexibility of three-dimensional structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bonding wires are used to electrically couple island electrodes to external devices through through holes in the upper substrate, then electrical coupling is achieved, but the through holes must be large which increases production costs and complicates the sealing structure

Engineering Contradiction:

Improveelectrical couplingVSAvoidsealing structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the electrical coupling function and sealing function into a single integrated structure. The insulating holes with conductive members serve dual purposes: providing electrical connections between island electrodes and external devices while simultaneously maintaining the hermetic sealing structure, eliminating the need for separate bonding wires and large through holes

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from a planar wiring approach using bonding wires to a vertical three-dimensional wiring approach. Conductive members are formed inside insulating holes that extend vertically through the upper substrate, allowing electrical connections to be made in the depth dimension rather than requiring large lateral openings

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If large through holes are provided in the upper substrate for wire bonding, then electrical coupling is achieved, but the dimension of the chip increases and production cost increases

Engineering Contradiction:

Improveelectrical couplingVSAvoidproduction cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces the mechanical wire bonding system with a semiconductor fabrication-based conductive member filling system. Instead of using external bonding wires that require large access holes, conductive members are deposited and formed directly inside insulating holes through standard semiconductor manufacturing processes, eliminating the need for large through holes and reducing chip dimensions

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS8269290B2Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same

Publication Date: 2012.09.18 DENSO CORP

AI summary

In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole.