Semiconductor Insulating Layer Alpha Ray Blocking
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Solution Overview
Problem
Conventional semiconductor devices and manufacturing methods experience soft errors due to alpha rays generated from materials like Pb, Sn, and inorganic fillers, which can rewrite information stored in memory cells.
Innovation Solution
A semiconductor device with an insulating layer containing alpha ray blocking materials such as polyimide and/or polyimide-based compounds, and an inorganic filler amount adjusted to minimize alpha ray detection, combined with a Pb-free external connection terminal and filler-less solder resist, to reduce soft errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional materials (Pb, Sn, inorganic fillers) are used in insulating layers and external connection terminals, then manufacturing ease and cost are improved, but soft errors occur due to alpha ray generation
Solution Approach 1:
The patent changes the material composition parameters of the insulating layer by incorporating alpha ray blocking materials such as polyimide and specific inorganic fillers (BaSO4, Pb-free glass beads) with controlled particle sizes and concentrations. This parameter change blocks alpha rays while maintaining manufacturing feasibility through established coating and curing processes.
Solution Approach 2:
The patent creates a composite insulating layer material combining epoxy resin or cyanate ester resin base with alpha ray blocking materials (polyimide at 1-20 wt%, inorganic fillers). This composite structure provides both the adhesive and insulating properties of the base resin and the alpha ray blocking capability of the added materials, achieving data integrity without sacrificing ease of manufacture.
2Strength
If inorganic fillers are added to insulating layer, then mechanical strength and thermal expansion control are improved, but alpha ray generation increases causing soft errors
Solution Approach 1:
The patent replaces traditional long-term stable inorganic fillers like PbO and BaO that generate alpha rays with shorter-lived or stable isotopes such as Pb-free glass beads and BaSO4 that do not generate harmful radiation. This substitution maintains the mechanical strength and thermal expansion control functions while eliminating alpha ray generation.
Solution Approach 2:
The patent changes the particle size parameter of inorganic fillers to 1-10 μm range and controls their concentration at 1-50 wt% in the insulating layer. These parameter changes optimize both the mechanical reinforcement effect and the alpha ray blocking capability, achieving strength improvement without increasing harmful radiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively blocks alpha rays and reduces soft errors, enhancing data integrity by minimizing alpha ray-induced errors in semiconductor devices.
Implementation Method 1
the insulating layer is constructed to contain an alpha ray blocking material including polyimide and/or a polyimide-based compound
Data Source
AI summary
There is provided a semiconductor device including a semiconductor substrate on which a plurality of semiconductor chips having electrode pads is formed, an internal connection terminal provided on each of the electrode pads, an insulating layer provided to cover the plurality of semiconductor chips and the internal connection terminals, and a wiring pattern connected to the internal connection terminals across the insulating layer. This semiconductor device is characterized in that the insulating layer is configured to contain an alpha ray blocking material including polyimide and/or a polyimide-based compound.