Semiconductor Insulating Film Structure for High Breakdown Voltage
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Solution Overview
Problem
High breakdown voltage semiconductor devices face challenges in maintaining reliability and insulation properties under high electric fields, particularly due to ion penetration and stress concentration issues that can lead to breakdown and deformation.
Innovation Solution
A semiconductor device structure featuring a first low-stress insulating film with low internal stress, composed of silicon, oxygen, nitrogen, and hydrogen, and a second protective film with silicon nitride, which suppresses ion penetration and stress concentration, ensuring high breakdown voltage performance and reliability by maintaining insulation even under high electric fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a high breakdown voltage semiconductor device is used, then the device can operate under high electric fields, but ion penetration and stress concentration occur leading to reduced reliability
Solution Approach 1:
The patent divides the insulating film into multiple layers: a first insulating film (SiO2) and a second insulating film (SiON). This segmentation allows each layer to perform specific functions - the SiO2 layer provides basic insulation while the SiON layer suppresses ion penetration and reduces stress concentration, thereby maintaining reliability under high breakdown voltage conditions
Solution Approach 2:
The patent uses a composite insulating film structure combining silicon oxide (SiO2) and silicon oxynitride (SiON) materials. This composite approach leverages the complementary properties of both materials - SiO2 for high dielectric strength and SiON for ion barrier properties and stress management - to simultaneously achieve high breakdown voltage and maintained reliability
2Strength
If the insulating film is made thicker to improve insulation, then breakdown voltage increases, but internal stress concentration increases leading to film deformation
Solution Approach 1:
The thick insulating film is segmented into two thinner layers: a first SiO2 film and a second SiON film. This segmentation distributes the internal stress across multiple interfaces and reduces stress concentration at any single point, preventing film deformation while maintaining the required total thickness for high insulation strength
Solution Approach 2:
The patent changes the material composition parameter by introducing silicon nitride components in the SiON layer. This parameter change modifies the stress characteristics of the insulating film, reducing internal stress concentration while maintaining adequate insulation strength, thereby allowing thicker effective insulation without proportional stress increase
Data Source
AI summary
A semiconductor device includes a semiconductor part, a terminal insulating film, a first protective film, a second electrode, a terminal electrode, a first insulating film, and a second protective film. The terminal insulating film is provided on the semiconductor part in the terminal region. The first protective film is provided on the terminal insulating film. The first and second protective films includes silicon and nitrogen. The second electrode is provided on the semiconductor part in the cell region and includes an end portion located on the first protective film. The terminal electrode is provided on the first protective film in the terminal region and is connected to the semiconductor part. The first insulating film is provided on the first protective film. The first insulating film includes hydrogen and contacts the second electrode and the terminal electrode. The second protective film covers the first insulating film.