Semiconductor Insulating Film Thickness Correction
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Solution Overview
Problem
In semiconductor device manufacturing, variations in film thickness during the hard mask or resist forming process lead to inconsistencies in pattern sizes, affecting the characteristics and yield of miniaturized semiconductor devices.
Innovation Solution
A method involving the formation of a first insulating film, followed by polishing and measuring its thickness distribution, and then forming a second insulating film to correct the film thickness distribution, ensuring uniformity across the substrate plane by controlling the deposition of silicon-containing and oxygen-containing gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single insulating film is formed without thickness correction, then the manufacturing process is simple, but the film thickness uniformity deteriorates
Solution Approach 1:
The patent applies preliminary action by measuring the film thickness distribution of the first insulating film before forming the second insulating film. This measurement data is then used to determine the appropriate film thickness distribution for the second insulating film, allowing the thickness correction to be planned and executed systematically rather than through trial and error
Solution Approach 2:
The patent implements local quality by forming the second insulating film with a specific film thickness distribution that is tailored to compensate for the non-uniformity of the first insulating film. Different regions of the substrate receive different amounts of additional film material, with thicker regions receiving less additional material and thinner regions receiving more, thereby achieving overall thickness uniformity
2Productivity
If film thickness is not corrected, then the production cycle is short, but the device characteristics variation increases
Solution Approach 1:
The patent employs feedback by measuring the actual film thickness distribution of the first insulating film and using this measurement information to control the formation of the second insulating film. The film formation conditions (such as deposition rate, temperature, or gas flow) are adjusted based on the measured thickness distribution to achieve the desired correction
Solution Approach 2:
The measurement of the first insulating film thickness is performed in advance before the second insulating film formation, allowing the process parameters to be predetermined and optimized. This preliminary measurement enables the system to prepare the appropriate deposition conditions beforehand, minimizing delays in the production cycle
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses variations in semiconductor device characteristics, improving yield by ensuring uniform film thickness and pattern consistency.
Implementation Method 1
polishing the first insulating film
Implementation Method 2
controlling the deposition of silicon-containing and oxygen-containing gases
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a first insulating film as a portion of a laminated insulating film on a substrate in which a plurality of circuit configurations is formed; polishing the first insulating film; measuring a film thickness distribution of the first insulating film; and forming a second insulating film as a portion of the laminated insulating film on the polished first insulating film at a film thickness distribution differing from the film thickness distribution of the first insulating film to correct a film thickness of the laminated insulating film.