Semiconductor Device Insulating Film Width Variation
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Solution Overview
Problem
In semiconductor devices, heat generated by the semiconductor element is not effectively transferred to the high-thermal conductor due to the presence of an insulating film, leading to uneven temperature distribution and inadequate temperature detection by the temperature sensor.
Innovation Solution
The semiconductor device is designed with a specific configuration where the front surface insulating film has a wider first portion closer to the temperature sensor and a narrower second portion farther from it, allowing for better heat dissipation to the thermal conductor and ensuring the temperature sensor detects the hotter regions appropriately.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film is disposed on the surface electrode to prevent short circuits, then electrical insulation is improved, but heat transfer from the semiconductor element to the thermal conductor deteriorates
Solution Approach 1:
The insulating film is segmented into different regions: a first region with larger thickness covering the peripheral portion of the surface electrode, and a second region with smaller thickness covering the central portion. This segmentation allows the peripheral region to provide electrical insulation while the central region maintains thermal conduction path to the thermal conductor.
Solution Approach 2:
Different thicknesses of the insulating film are applied to different locations on the surface electrode. The first region has a first thickness and the second region has a second thickness smaller than the first thickness. This local quality variation ensures that heat can effectively reach the thermal conductor through the thinner second region while the thicker first region provides adequate electrical insulation.
2Device complexity
If the temperature sensor is disposed in the non-active region, then device structure is simplified, but temperature detection accuracy deteriorates due to insufficient heat generation in that region
Solution Approach 1:
The surface electrode acts as an intermediary to transfer heat from the active region to the non-active region where the temperature sensor is located. The insulating film on the surface electrode is designed with a second region having smaller thickness to facilitate heat conduction from the active region through the surface electrode to the temperature sensor in the non-active region.
Solution Approach 2:
The temperature sensor is positioned in the non-active region but heat is conducted to it through the surface electrode from the active region. This spatial arrangement in different dimensions (active region for heat generation, non-active region for detection) allows simplified device structure while maintaining detection capability through thermal conduction path.
3Reliability
If the insulating film covers the entire surface electrode, then electrical insulation is maximized, but temperature detection capability deteriorates
Solution Approach 1:
The insulating film is divided into a first region and a second region with different thicknesses. The first region provides electrical insulation while the second region with smaller thickness allows heat to reach the temperature sensor, thus maintaining both insulation and detection capabilities.
Solution Approach 2:
The insulating film has non-uniform thickness distribution: a first thickness in the first region and a second thickness smaller than the first thickness in the second region. This local quality variation enables the film to simultaneously provide electrical insulation and thermal conduction path for temperature detection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures accurate temperature detection by maintaining higher temperatures in regions closer to the temperature sensor, thereby enabling effective temperature monitoring and control within the semiconductor device.
Implementation Method 1
a thermal conductor (60) connected to the front surface electrode (40) in the aperture (72). The thermal conductor (60) has a higher thermal conductivity than thermal conductivities of the semiconductor substrate (10) and the front surface insulating film (70)
Implementation Method 2
a temperature sensor (50) disposed above the front surface in the non-active region (110)
Implementation Method 3
The front surface insulating film (70) on the front surface electrode (40) within the active region (100) comprises: a first portion (70a) extending along the first side (40a) and having a first width (W1) in a direction from the non-active region (110) toward the active region (100); and a second portion (70b) extending along the second side (40b) and having a second width (W2) in the direction from the non-active region (110) toward the active region (100). The first width (W1) is wider than the second width (W2)
Data Source
AI summary
A semiconductor device capable of carrying out temperature detection appropriately by a temperature sensor is provided. In a semiconductor device disclosed herein, a first width of a first portion within a front surface insulating film (that is, part located in an upper part of an active region among a part extending along a first side of a front surface electrode that is closer to the temperature sensor) is wider than a second width of a second portion within the front surface insulating film (that is, part located in the upper part of the active region among a part extending along a second side of the front surface electrode).