Semiconductor Device Insulating Layer Leakage Current Reduction
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Solution Overview
Problem
The shrinking size of semiconductor devices leads to increased dynamic and static power consumption due to higher leakage current, exacerbated by the short-channel effect, and the use of SOI substrates, while offering reduced leakage, is costly and difficult to integrate, affecting heat dissipation and causing floating body effects.
Innovation Solution
A semiconductor device structure incorporating a bulk silicon substrate with a GexSi1-x second semiconductor layer and a silicon third semiconductor layer, featuring an insulating layer below the source and drain regions and between the isolation structure and the substrate, which reduces leakage current and power consumption, enhances integration, and improves heat dissipation by eliminating floating body effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device size is continuously shrunk to increase integration density, then the number of devices per unit area increases, but leakage current increases and static power consumption increases
Solution Approach 1:
The semiconductor device is divided into distinct layers including a substrate, first semiconductor layer, second semiconductor layer, and insulating layer. This segmentation allows the insulating layer to be positioned specifically below the channel region to suppress leakage current while maintaining high integration density through vertical stacking of functional layers.
Solution Approach 2:
An insulating layer is introduced as an intermediary element between the substrate and the second semiconductor layer, specifically positioned below the channel region. This intermediary layer suppresses leakage current and reduces static power consumption without preventing the continuous scaling of device dimensions for high integration.
2Loss of energy
If SOI substrate is used to reduce leakage current and power consumption, then short channel effect is suppressed, but cost increases and device area increases
Solution Approach 1:
Instead of using a full SOI substrate structure, the insulating layer is applied locally only below the channel region of the second semiconductor layer. This local quality approach suppresses leakage current and power consumption in the critical channel area while avoiding the need for larger device area and reducing overall device complexity.
3Loss of energy
If silicon dioxide layer is embedded in SOI substrate to reduce leakage, then leakage current decreases, but heat dissipation performance is affected
Solution Approach 1:
An insulating layer (which can be silicon oxide or other materials) is introduced as an intermediary below the channel region to suppress leakage current. The source and drain regions are positioned on this insulating layer, creating a structure that reduces leakage while the overall device architecture maintains heat dissipation pathways through the substrate and lateral regions.
4Productivity
If device size is shrunk leading to shorter channel lengths, then integration density increases, but short-channel effect becomes dominant
Solution Approach 1:
The device structure is segmented into multiple layers with the insulating layer positioned specifically below the channel region. This segmentation allows the channel length to be shortened for high integration density while the insulating layer provides electrostatic control to suppress short-channel effects and maintain device reliability.
Solution Approach 2:
The insulating layer acts as an intermediary that provides electrostatic control over the channel region, suppressing short-channel effects that become dominant when channel lengths are shortened. This allows continuous device scaling while maintaining reliable device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves lower power consumption, faster operation, and higher integration with reduced costs compared to SOI devices, while maintaining better heat dissipation and avoiding floating body effects, making it suitable for high-radiation environments.
Implementation Method 1
an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer
Implementation Method 2
epitaxially growing the second semiconductor of GexSi1-x on the substrate
Implementation Method 3
selectively removing the second semiconductor layer by a wet etching so as to form an opening
Implementation Method 4
oxidizing to form an insulating layer of an oxide material on exposed surfaces of the substrate, the second semiconductor layer and the third semiconductor layer
Data Source
AI summary
A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.