3D Semiconductor Memory Insulating Member Design
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Solution Overview
Problem
In semiconductor memory devices with a three-dimensional structure, as the number of stacked electrode films increases, electric discharge between the substrate and interconnects occurs due to processing, leading to potential breakdown and reliability issues.
Innovation Solution
The semiconductor memory device incorporates an insulating member with a specific width configuration between conductive films and stacked bodies, which extends in different directions to prevent electrical breakdown by equalizing the potential of conductive films with the substrate, thereby reducing discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked electrode films is increased to increase the degree of integration, then the storage capacity is improved, but electric discharge between substrate and interconnect occurs resulting in reliability degradation
Solution Approach 1:
An insulating film is introduced as an intermediary layer between the substrate and the interconnect structure. This insulating film acts as a mediator that prevents direct electrical contact and potential discharge between the substrate and interconnect, while still allowing the interconnect to function properly for electrical connection to the stacked electrode films.
Solution Approach 2:
The structure is segmented into distinct functional layers with the insulating film separated between the substrate and interconnect. This segmentation creates electrical isolation zones that prevent discharge while maintaining the necessary electrical pathways for memory operation through the stacked electrode films.
2Quantity of substance
If processing of memory hole is performed to increase degree of integration, then the storage capacity is improved, but electric discharge occurs during processing
Solution Approach 1:
The insulating film is deposited beforehand on the substrate before forming the memory hole and interconnect structure. This pre-established insulating layer provides protective cushioning that prevents electric discharge during subsequent processing steps, including memory hole formation and interconnect fabrication.
Solution Approach 2:
The insulating film serves as a protective intermediary during processing operations. It mediates between the processing tools and the substrate, preventing harmful discharge effects while allowing the processing to proceed to create the high-density memory structure.
Data Source
AI summary
According to an embodiment, a semiconductor memory device includes a substrate, an insulating film, a plurality of conductive films, an insulating member, a plurality of stacked bodies, and a first member. The insulating member is provided on the insulating film, is positioned between the conductive films in a first direction along the substrate, and extends in a second direction along the substrate, the second direction crossing the first direction. The first member is provided on the insulating member, is positioned between the stacked bodies in the first direction, and extends in a stacking direction of the plurality of electrode films of the stacked bodies. A width in the first direction of the insulating member is larger than a width in the first direction of the first member.