Semiconductor Device Insulating Film Mold Layer Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face reliability issues due to degradation of insulating films under high temperature and humidity conditions, leading to moisture ingress and ion migration, which can cause malfunctions.
Innovation Solution
A semiconductor device design that includes a semiconductor layer with a first and second main surface, a first and second electrode layer, an insulating film covering the end portion of the first electrode layer, a plating layer covering at least a portion of the first electrode layer other than the end portion, and a mold layer covering the insulating film, which enhances the reliability by suppressing degradation of the insulating film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film is used to cover the end portion of the electrode layer, then electrical insulation is achieved, but the insulating film degrades under high temperature and humidity conditions leading to reliability issues
Solution Approach 1:
The patent uses a composite structure consisting of an insulating film layer and a mold layer. The insulating film (such as silicon oxide or silicon nitride) provides electrical insulation, while the mold layer (resin material) provides environmental protection. This composite material approach allows each layer to perform its specific function optimally, preventing the insulating film from degrading under high temperature and humidity while maintaining electrical insulation properties.
Solution Approach 2:
The mold layer acts as an intermediary protective barrier between the insulating film and the harsh external environment. This intermediary layer prevents direct exposure of the insulating film to high temperature and humidity, thereby preventing degradation and maintaining long-term reliability of the semiconductor device.
2Ease of manufacture
If the insulating film is exposed to the environment, then manufacturing is simpler, but moisture ingress and ion migration occur causing malfunctions
Solution Approach 1:
The patent employs a composite structure with two distinct layers: an insulating film for electrical insulation and a mold layer for environmental protection. This composite approach maintains manufacturing simplicity while adding the necessary protective function, as the mold layer can be applied as a final encapsulation step that seals the insulating film from environmental exposure.
Solution Approach 2:
The mold layer functions as a flexible protective shell that encapsulates the insulating film and electrode structures. This thin film layer provides comprehensive protection against moisture ingress and ion migration while allowing the underlying electrical structures to function normally, thus preventing malfunctions without complicating the manufacturing process.
Data Source
AI summary
A semiconductor device includes a semiconductor layer that has a main surface, a main surface electrode that is arranged at the main surface, an insulating film that partially covers the main surface electrode such as to expose a portion of the main surface electrode, a mold layer that covers the insulating film such as to expose the main surface electrode, and a pad electrode that is arranged on the main surface electrode such as to be electrically connected to the main surface electrode.