Semiconductor Insulating Structure With Resistive Connecting Element
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Solution Overview
Problem
There is a need to improve the electrical insulation between regions in semiconductor devices to enhance their performance and reliability.
Innovation Solution
A semiconductor device is designed with an insulating structure laterally between regions and a connecting structure at the surface, where the connecting structure has a specific electrical resistivity range, allowing for efficient control of potential differences and increased lateral breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating structure is introduced laterally between regions, then lateral electrical insulation is improved, but device complexity increases
Solution Approach 1:
The insulating structure is segmented into multiple portions: a first insulating portion extending from the surface into the substrate, and a second insulating portion laterally adjacent to the first. This segmentation provides comprehensive lateral electrical insulation while maintaining a manageable structural complexity through modular design.
Solution Approach 2:
The insulating structure acts as an intermediary element positioned between the first and second regions, providing electrical insulation without requiring direct modification of the regions themselves. This mediator approach isolates the regions electrically while preserving their individual functionalities.
2Reliability
If a connecting structure with specific resistivity is added, then control of potential differences is improved, but manufacturing complexity increases
Solution Approach 1:
The connecting structure is designed with a specific electrical resistivity parameter (greater than 10^-3 Ωm and less than 10^12 Ωm) that optimizes its ability to control potential differences. This parameter control allows the structure to provide appropriate electrical connection while managing potential differences effectively.
Solution Approach 2:
The connecting structure exhibits local quality by having different electrical properties at different locations - it provides electrical connection where needed while maintaining appropriate resistance to control potential differences. This localized property variation enables precise control of electrical characteristics without uniform complexity throughout the structure.
3Reliability
If the insulating structure is extended laterally, then lateral breakdown voltage is increased, but area occupied increases
Solution Approach 1:
The insulating structure utilizes the vertical dimension by extending from the surface into the substrate, rather than relying solely on lateral extension. This dimensional approach increases the breakdown voltage path length without proportionally increasing the lateral area occupied, achieving higher reliability with minimal area penalty.
Solution Approach 2:
The insulating structure is nested within the device architecture, with the first insulating portion positioned within the substrate and the second insulating portion laterally adjacent. This nested arrangement maximizes the insulating effect within the available space, increasing breakdown voltage without excessive area occupation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the lateral electrical insulation between regions, enhancing the overall electrical insulation of the semiconductor device and allowing for effective operation across different voltage domains.
Implementation Method 1
The insulating structure electrically insulates the first region laterally from the second region in the semiconductor substrate
Implementation Method 2
at least a sub-structure of the connecting structure has an electrical resistivity greater than 1*10³ Ωm and less than 1*10¹² Ωm
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first region and a second region. The semiconductor device also includes an insulating structure laterally between the first region and the second region in the semiconductor substrate. The insulating structure electrically insulates the first region laterally from the second region in the semiconductor substrate. The semiconductor device further includes a connecting structure at a surface of the semiconductor substrate. The connecting structure contacts at least a sub-structure of the insulating structure and at least one of the first region and the second region. At least a sub-structure of the connecting structure has an electrical resistivity greater than 1*103 Ωm and less than 1*1012 Ωm.