Semiconductor Device Insulating Spacer Design for Capacitance Reduction
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Solution Overview
Problem
As miniaturization and high integration of integrated circuit devices progress, transistors face challenges in maintaining operation stability, particularly in reducing fringing capacitance and parasitic capacitance to improve speed and reduce power consumption.
Innovation Solution
The semiconductor device incorporates a gate dielectric layer with corner and outer portion insulating spacers, where the corner spacers have a higher dielectric constant and cover the gate side walls, while the outer spacers, with a lower dielectric constant, cover above the corner spacers, reducing fringing capacitance and parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If miniaturization and high integration of integrated circuit devices progress, then device density and integration level improve, but fringing capacitance and parasitic capacitance increase causing operation stability deterioration
Solution Approach 1:
The insulating spacer is divided into two distinct segments: a corner insulating spacer with higher dielectric constant positioned at the gate corner, and an outer portion insulating spacer with lower dielectric constant positioned laterally outward. This segmentation allows each segment to perform its specific function optimally - the corner spacer controls fringing capacitance while the outer spacer minimizes parasitic capacitance, thereby resolving the contradiction between high integration and operation stability.
Solution Approach 2:
Different regions of the insulating spacer structure are assigned different dielectric constants based on their specific functional requirements. The corner region uses higher dielectric constant material for fringing capacitance control, while the outer lateral region uses lower dielectric constant material for parasitic capacitance reduction. This local quality differentiation enables the structure to simultaneously achieve high integration density and stable operation characteristics.
2Area of moving object
If transistor size is reduced to improve integration, then device area decreases, but fringing capacitance and parasitic capacitance become more significant reducing speed of operation
Solution Approach 1:
The insulating spacer is segmented into corner and outer portion sections with different dielectric constants. This segmentation enables precise control of capacitance effects at different locations, allowing transistors to be miniaturized without the fringing and parasitic capacitance becoming dominant factors that would limit operating speed.
Solution Approach 2:
The dielectric constant parameter is varied spatially within the insulating spacer structure - higher dielectric constant at the corner for fringing capacitance control, lower dielectric constant at the outer portion for parasitic capacitance reduction. This parameter change strategy enables maintaining high operating speed even as transistor dimensions are reduced for higher integration.
3Area of moving object
If transistor size is reduced to improve integration, then device area decreases, but power consumption increases due to higher fringing and parasitic capacitance
Solution Approach 1:
By segmenting the insulating spacer into corner and outer portion sections with optimized dielectric constants, the structure minimizes both fringing capacitance (at the corner) and parasitic capacitance (at the outer portion). This enables transistor miniaturization for higher integration without the penalty of increased power consumption from excessive capacitance effects.
Solution Approach 2:
Different dielectric constant materials are applied to different local regions of the insulating spacer based on where specific capacitance problems occur. This local optimization reduces overall capacitance effects in miniaturized transistors, thereby reducing power consumption while maintaining small device area for high integration.
4Object-affected harmful factors
If corner insulating spacer with higher dielectric constant is used, then fringing capacitance is reduced, but device complexity increases due to multi-layer insulating spacer structure
Solution Approach 1:
The insulating spacer is segmented into two functional sections with different dielectric constants, which does increase structural complexity. However, this segmentation is implemented through a systematic process where the corner spacer is formed first, followed by the outer portion spacer, creating a modular structure that manages complexity in an organized manner while achieving superior fringing capacitance control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the speed of operation and reduces power consumption by minimizing fringing and parasitic capacitance, thereby improving the performance and efficiency of the transistors.
Implementation Method 1
an outer portion insulating spacer covering the side wall of the gate above the corner insulating spacer, the outer portion insulating spacer having a dielectric constant smaller than that of the corner insulating spacer
Data Source
AI summary
The semiconductor device including: a semiconductor layer extending in a first direction, the semiconductor layer including a pair of source/drain regions and a channel region, a gate extending on the semiconductor layer to cover the channel region, and a gate dielectric layer interposed between the channel region and the gate, a corner insulating spacer having a first surface and a second surface, the first surface extending in the second direction along a side wall of the gate, the first surface covering from a side portion of the gate dielectric layer to at least a portion of the side wall of the gate, and the second surface covering a portion of the semiconductor layer, and an outer portion insulating spacer covering the side wall of the gate above the corner insulating spacer, the outer portion insulating spacer having a smaller dielectric constant than the corner insulating spacer, may be provided.