Semiconductor Device Insulating Structure Breakdown Voltage
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Solution Overview
Problem
High-voltage semiconductor devices face breakdown voltage drops due to high electric fields between the edge of the gate electrode and the drain region, which deteriorates RF characteristics and reliability, especially when current concentrates in element isolation regions.
Innovation Solution
A semiconductor device design that includes an insulating structure between the gate electrode and the drift region, preventing the formation of high electric fields and eliminating the need for element isolation regions between the source and drain, along with a dummy gate structure to further enhance breakdown voltage and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If element isolation regions are used to define the active region, then the device structure is well-defined, but breakdown voltage drops due to high electric fields between the gate electrode edge and drain region
Solution Approach 1:
A first insulating structure is introduced as an intermediary between the gate electrode and the drift region. This insulating structure prevents direct interaction between the gate electrode edge and the drift region, thereby eliminating the high electric field concentration that causes breakdown voltage drops. The insulating structure acts as a mediator that resolves the harmful electric field issue without compromising the device's functional definition.
2Reliability
If element isolation regions are used between source and drain, then current concentration is controlled, but RF characteristics and reliability deteriorate due to breakdown voltage drops
Solution Approach 1:
The element isolation region is extracted or removed from between the source and drain regions. By eliminating this structure, the harmful current concentration effect is removed. The patent achieves reliable current control through alternative means (such as the body region and insulating structure configuration) while avoiding the breakdown voltage drops that were caused by the element isolation region's presence.
3Area of stationary object
If gate electrode is positioned close to drain region for compact design, then device area is reduced, but high electric field forms causing breakdown voltage drop
Solution Approach 1:
The first insulating structure serves as a mediator that allows the gate electrode to be positioned close to the drain region for compact design while preventing the formation of high electric fields. By introducing this insulating layer, the patent achieves both compactness and high breakdown voltage, as the insulating structure blocks the electric field path without requiring large spacing between components.
Data Source
AI summary
A semiconductor device includes an active region defined by an element isolation region in a base substrate, source and drain regions of a first conductivity type spaced apart from each other, and formed in the active region, a body region of a second conductivity type surrounding the source region, and formed in the base substrate, a drift region of the first conductivity type surrounding the drain region, having a lower impurity concentration than the drain region, and formed in the base substrate, an insulating structure including a buried insulating pattern and a semiconductor pattern sequentially stacked on the drift region, a gate dielectric film including a first portion extending along an upper surface of the body region and a second portion extending along a side surface and an upper surface of the insulating structure, and a gate electrode extending along an upper surface of the gate dielectric film.