Semiconductor Insulation Layer Layout for Thin High-Voltage Packages
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining sufficient insulation distances when thinned, particularly under high voltage conditions, due to the proximity of the switching device's outer edge to the connection conductor, which can lead to electrical breakdown.
Innovation Solution
Incorporating an insulation layer with high electrical resistivity between the switching device and the connection conductor, specifically at the outer edge portions, to ensure adequate insulation while maintaining device thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor device is thinned to reduce size, then device compactness is improved, but insulation distance between the switching device outer edge and connection conductor decreases leading to electrical breakdown risk
Solution Approach 1:
An insulation layer is introduced as an intermediary component between the switching device outer edge and the connection conductor. This insulation layer, made of material with high electrical resistivity (such as resin or ceramic), physically separates the conductive elements and prevents electrical breakdown while allowing the overall device thickness to remain thin. The insulation layer acts as a mediator that maintains the necessary electrical isolation without requiring increased device dimensions.
2Reliability
If insulation distance is increased to prevent electrical breakdown, then reliability is improved, but device thickness increases
Solution Approach 1:
The insulation layer is applied locally at the outer edge portion of the switching device where the connection conductor is positioned, rather than uniformly throughout the entire device. This localized application provides the necessary electrical insulation precisely where the breakdown risk exists (at the edge near the connection conductor) while minimizing the overall impact on device thickness. The insulation is concentrated in the critical region rather than distributed everywhere.
3Area of stationary object
If the switching device outer edge is positioned closer to the connection conductor to reduce device area, then area efficiency is improved, but electrical breakdown risk increases due to insufficient insulation distance
Solution Approach 1:
The insulation layer serves as a protective intermediary that enables the switching device outer edge to be positioned closer to the connection conductor without direct electrical contact. This mediator allows optimized spatial arrangement and reduced device area while simultaneously preventing the harmful effect of electrical breakdown by maintaining adequate electrical insulation distance in the high-stress edge region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insulation layer provides sufficient electrical insulation, ensuring the semiconductor device operates reliably under high voltages without the risk of electrical breakdown, even when thinned.
Implementation Method 1
an insulation layer with high electrical resistivity between the switching device and the connection conductor
Data Source
AI summary
Provided is a semiconductor device, comprising: a switching device having a first main electrode on one surface; a connection conductor that is connected to the first main electrode of the switching device; an encapsulating portion that encapsulates a space between the switching device and the connection conductor; and an insulation layer arranged to overlap with the encapsulating portion between at least a part of the switching device and the connection conductor.