Semiconductor Package Insulation and Thickness Reduction

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Solution Overview

Problem

The existing methods for preventing silicon exposure at the side walls of semiconductor chips from being electrically connected to the wiring layer result in increased package thickness when an insulating film is applied after chip mounting, which is undesirable for reducing package sizes.

Innovation Solution

A seamlessly continuous first insulating film is applied to both the surface and side surfaces of the semiconductor chip before mounting, with the wiring layer directly contacting the insulating film and the support, eliminating the need for additional insulating films and simplifying the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an insulating film is provided after the chip is mounted on the support, then the side wall of the chip is protected from electrical connection to the wiring layer, but the mounted thickness of the chip increases and the total thickness of the semiconductor package increases

Engineering Contradiction:
Improveelectrical insulationVSAvoidpackage thickness
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The insulating film is formed on the side surface of the semiconductor chip before the chip is mounted on the support. This preliminary action ensures that the insulating film is already in place to prevent electrical connection between the side wall and wiring layer, eliminating the need for additional insulating films after mounting and thus reducing the overall package thickness.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If an insulating film is provided after chip mounting to prevent electrical connection, then electrical insulation is achieved, but the manufacturing process becomes more complex with additional layers

Engineering Contradiction:
Improveelectrical insulationVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating film is formed on the side surface of the semiconductor chip before mounting, which simplifies the overall structure by eliminating the need for additional insulating layers after chip mounting. This preliminary formation of the insulating film reduces structural complexity while maintaining electrical insulation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The insulating function is extracted and applied specifically to the side surface of the chip before mounting, rather than applying a comprehensive insulating layer after mounting that would cover the entire chip assembly. This extraction approach reduces unnecessary layers and simplifies the overall device structure.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS11469184B2Semiconductor device and manufacturing method of the same
Publication Date: 2022.10.11 KIOXIA CORP
  • US11469184B2 patent drawing
  • US11469184B2 patent drawing
  • US11469184B2 patent drawing

AI summary

A semiconductor device includes a support, a semiconductor chip, a first insulating film, and a wiring layer. The support comprises a first electrode. The semiconductor chip has a first surface facing the support and a second surface facing away from the support with a second electrode thereon. The first insulating film has a first portion in contact with the first surface and a second portion in contact with at least one side surface of the semiconductor chip. The wiring layer connects the first electrode to the second electrode. The wiring layer is on the support, the second surface of the semiconductor chip, a side surface of the second portion of the first insulating film.