Power Semiconductor Device Insulation Peeling Detection
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Solution Overview
Problem
Power semiconductor devices face reliability issues due to peeling between the conductor portion and the insulating layer, and between the insulating layer and the heat dissipating body, leading to decreased insulation reliability and cooling performance, especially under high temperature conditions.
Innovation Solution
A power semiconductor device design that includes a power semiconductor element, a conductor portion, an insulating layer in contact with the conductor portion, and a metallic heat dissipating portion that sandwiches the insulating layer, with an output terminal connected to the conductor layer to detect the contact state and prevent peeling through capacitance and voltage measurements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer is arranged between the conductor portion and the heat dissipating body to provide insulation, then the insulation property is improved, but the thermal conductivity decreases due to the insulating layer blocking heat transfer
Solution Approach 1:
A heat dissipation member with high thermal conductivity and high insulation reliability is introduced as an intermediary component between the conductor portion and the heat dissipating body. This mediator simultaneously achieves both insulation function and efficient heat transfer, resolving the contradiction between insulation property and thermal conductivity.
2Productivity
If the power semiconductor element operates at higher temperature to increase power density, then the productivity is improved, but the peeling between conductor portion and insulating layer worsens due to thermal expansion differences
Solution Approach 1:
The thermal expansion coefficient of the heat dissipation member is designed to match that of the conductor portion by selecting appropriate materials. This parameter matching reduces thermal stress and prevents peeling between the conductor portion and insulating layer, enabling high-temperature operation without reliability degradation.
3Reliability
If a thick insulating layer is used to ensure insulation reliability, then the insulation property is improved, but the heat dissipation performance worsens due to increased thermal resistance
Solution Approach 1:
The heat dissipation member is constructed as a composite structure combining insulating material with high thermal conductivity characteristics. This composite material simultaneously provides both insulation reliability and superior heat dissipation performance, eliminating the need to compromise between insulation thickness and thermal resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses the decrease in reliability by diagnosing and preventing peeling, thereby maintaining the insulation and cooling performance of the power semiconductor device, even under high temperature conditions, and extends the operational time before device failure.
Implementation Method 1
an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged
Implementation Method 2
a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer
Implementation Method 3
an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion
Data Source
AI summary
An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.