Semiconductor Device Insulator Thermal Expansion Matching
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Solution Overview
Problem
The difference in coefficient of linear expansion between the insulating layer and the conductive material circuit pattern in semiconductor devices with metal substrates leads to cracking and delamination of the circuit pattern from the insulating layer.
Innovation Solution
A semiconductor device design that includes a metal substrate with a conductive material pattern on an insulating layer, sealed by a sealing resin and covered by an insulator with a coefficient of linear expansion matching the insulating layer, to prevent delamination by improving adhesion and reducing stress concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive material circuit pattern is formed on an insulating layer on a metal substrate, then electrical connectivity and structural support are achieved, but the difference in coefficient of linear expansion between the insulating layer and conductive material causes cracking and delamination
Solution Approach 1:
An insulator layer is introduced as an intermediary between the conductive material pattern and the insulating layer. This insulator has a coefficient of linear expansion that matches the insulating layer, creating a gradual transition that reduces thermal stress concentration at the interface and prevents delamination during temperature changes
Solution Approach 2:
The coefficient of linear expansion is used as a critical parameter to select the material for the insulator layer. By matching this parameter between the insulator and insulating layer, the thermal expansion mismatch is minimized, preventing cracking and delamination under thermal stress conditions
2Adaptability or versatility
If the entire surface of the metal substrate is covered with an insulating layer and conductive circuit patterns, then complete electrical functionality is achieved, but the large surface area increases stress concentration and delamination risk
Solution Approach 1:
The insulator is applied selectively at specific locations where the conductive material pattern contacts the insulating layer, rather than covering the entire surface. This localized approach provides stress relief precisely where needed at the interface, preventing delamination without adding unnecessary material elsewhere
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively minimizes delamination of the conductive material pattern from the insulating layer, enhancing the reliability and durability of the semiconductor device by matching the coefficients of linear expansion and increasing the surface area of adhesion.
Implementation Method 1
the difference in coefficient of liner expansion between the insulating layer and the conductive material circuit pattern thereon may cause cracking in the metal substrate, resulting in delamination of the circuit pattern from the insulating layer
Data Source
AI summary
A semiconductor device includes a metal substrate, semiconductor elements, wires, a control terminal, a main electrode terminal, a control substrate, a cover, a sealing resin, a case, and an insulator. The metal substrate includes a metal plate, an insulating layer formed on the top surface of the metal plate, and electrode patterns provided on the insulating layer. The semiconductor elements are secured to different ones of the electrode patterns by solder. The sealing resin seals the components within the case, such as the semiconductor elements. The insulator covers a portion of the surface of the insulating layer and at least a portion of the edge of each electrode pattern.