Semiconductor Integrated Capacitor Vertical Electrode Design
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Solution Overview
Problem
Conventional capacitors in semiconductor devices face performance limitations due to space constraints, necessitating an improved integrated antenna structure that enhances capacitive performance while reducing contact resistance and manufacturing costs.
Innovation Solution
The proposed solution involves forming electrodes in parallel with an insulating film and conductive vias in a vertical direction to increase electrode area, with the electrodes extending beyond vias to enhance capacitive performance and reduce contact resistance, and using a single etching operation to form multiple vias, thereby reducing manufacturing time and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional capacitor designs are used in integrated circuits, then space constraints are addressed with compact structures, but capacitive performance is limited
Solution Approach 1:
The patent transitions from planar capacitor electrodes to vertically stacked three-dimensional electrodes. Multiple electrode layers are formed at different heights and connected via conductive vias, creating a vertical capacitor structure that increases effective capacitance area without expanding the horizontal footprint, thus resolving the contradiction between capacitive performance and space occupation.
Solution Approach 2:
The patent implements nested conductive vias where smaller vias are positioned within or adjacent to larger vias, allowing multiple electrical connections to be made through the same vertical space. This nesting approach maximizes the use of vertical real estate to connect multiple electrode layers, increasing capacitive performance while minimizing the horizontal area required.
2Manufacturing precision
If multiple etching operations are used to form vias for capacitor electrodes, then precise via formation is achieved, but manufacturing time and costs increase
Solution Approach 1:
The patent combines multiple via formation operations into a single etching process. By designing the etch mask and etch parameters to simultaneously create multiple via structures at different locations and depths, the patent reduces the number of separate manufacturing steps while maintaining the precision required for proper electrode connections, thus resolving the contradiction between manufacturing precision and productivity.
3Reliability
If electrode area is increased to enhance capacitive performance, then capacitance is improved, but contact resistance increases
Solution Approach 1:
The patent divides the electrode structure into multiple segmented layers connected by conductive vias. Each electrode layer is separately formed and connected, creating multiple parallel conduction paths. This segmentation allows the total contact area to be distributed across multiple via-electrode interfaces, reducing the contact resistance at each individual interface while maintaining the overall large electrode area needed for high capacitance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains or enhances capacitive performance while minimizing contact resistance and reduces manufacturing costs and time by using a single etching operation for forming multiple vias, effectively addressing the space constraints in semiconductor devices.
Implementation Method 1
performing an etching operation through the second dielectric layer at the second opening and the first dielectric layer at the first opening to form a first via
Data Source
AI summary
A method of manufacturing a semiconductor structure includes: providing a substrate; forming a first conductive layer having a first opening over the substrate; depositing a first dielectric layer over the first conductive layer and covering the first opening; forming a second conductive layer having a second opening over the first dielectric layer; depositing a second dielectric layer over the second conductive layer and covering the second opening; performing an etching operation through the second dielectric layer at the second opening and the first dielectric layer at the first opening to form a first via; and forming a first conductive structure in the first via.