Semiconductor Gate Structure With Integrated Resistor Layout

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Solution Overview

Problem

The challenge in integrated circuit (IC) design is to minimize the area occupied by passive components, as these components constrain the miniaturization and performance improvements of semiconductor devices.

Innovation Solution

The proposed solution involves embedding passive components, such as resistors, within active components like transistors, allowing for a hybrid component layout that reduces overall area usage on the semiconductor wafer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If passive components are designed as separate components, then their functionality is ensured, but the area occupied increases

Engineering Contradiction:
Improvearea occupied by passive componentsVSAvoidcomponent layout complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent merges passive components (resistors, capacitors) with active components (transistors) to form hybrid components. The passive component is integrated within the active component structure, allowing both functions to coexist in a single footprint, thereby reducing the total area occupied by separate passive components while maintaining their electrical functionality

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The hybrid component structure enables a single component to serve multiple functions - both active switching/amplification and passive resistance/capacitance. This multi-functionality eliminates the need for separate dedicated passive component areas, directly addressing the area reduction goal while preserving all required circuit functions

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If passive components are miniaturized, then area is reduced, but manufacturing precision requirements increase

Engineering Contradiction:
Improvearea occupied by passive componentsVSAvoiddimensional precision of passive components
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

By integrating passive components within the active component structure, the patent eliminates the need for separate miniaturized passive components. The passive functions are realized using the same fabrication processes and dimensional tolerances as the active components, avoiding the need for enhanced manufacturing precision that would be required for standalone miniaturized passive components

Inventive Principle:
Principle #5Merging (Combining)

3Area of stationary object

If separate passive and active components are used, then design flexibility is maintained, but overall device area increases

Engineering Contradiction:
Improvetotal device areaVSAvoidlayout design flexibility
Core Design Contradiction:
Area of stationary objectVSAdaptability or versatility

Solution Approach 1:

The hybrid component provides universal functionality that can be adapted to various circuit configurations. The integrated structure maintains design flexibility by allowing the same hybrid component to serve different circuit roles (switching, amplification, resistance, capacitance) depending on the specific implementation, while consistently reducing the total device area compared to separate component layouts

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250056872A1Semiconductor device and method of manufacturing the same
Publication Date: 2025.02.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250056872A1 patent drawing
  • US20250056872A1 patent drawing
  • US20250056872A1 patent drawing

AI summary

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, an active region on the substrate, and a gate structure, a source conductor, and a drain conductor disposed on the active region. The semiconductor device further comprises a first type doped region of the active region below the gate structure and a second type doped region of the active region adjacent to the first type doped region, and the first type doped region is different from the second type doped region. The second type doped region is configured to function as a resistor.