Semiconductor Interband Lasers Using High-Doped Cladding

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Solution Overview

Problem

Semiconductor mid-infrared diode lasers face challenges with thermal dissipation and optical loss due to the use of thick InAs/AlSb superlattice cladding layers, which are demanding to grow and lead to significant heating and undesirable optical loss, especially for longer wavelengths.

Innovation Solution

The use of high-doped semiconductor materials or metals as cladding layers to form a plasmon waveguide, reducing the refractive and permittivity indices, thereby improving thermal dissipation and optical confinement, and allowing for operation at longer wavelengths without the need for thick superlattice layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thick InAs/AlSb superlattice cladding layers are used to confine optical waves in mid-infrared lasers, then optical confinement is improved, but thermal dissipation deteriorates and manufacturing complexity increases

Engineering Contradiction:
Improveoptical confinementVSAvoidthermal dissipation
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the material composition parameters of the cladding layer by incorporating AlGaAsSb quaternary alloys with optimized aluminum content (x=0.2-0.4) to achieve both high refractive index contrast for optical confinement and improved thermal conductivity compared to traditional InAs/AlSb superlattices

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite cladding structures combining InAs/AlSb superlattice layers with AlGaAsSb quaternary alloy layers, where each material contributes different properties: the superlattice provides lattice matching while the quaternary alloy provides enhanced thermal dissipation and refractive index control

Inventive Principle:
Principle #40Composite materials

2Reliability

If thick InAs/AlSb superlattice cladding layers are used to confine optical waves, then optical confinement is improved, but device complexity increases due to multiple shutter movements in MBE growth

Engineering Contradiction:
Improveoptical confinementVSAvoidgrowth process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent reduces the number of growth steps by changing the material system from requiring thick superlattice structures to using quaternary alloy layers that achieve optical confinement with fewer interfaces, thereby reducing MBE shutter movements from hundreds to a manageable number

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts and eliminates the need for extremely thick superlattice structures by introducing AlGaAsSb quaternary layers that provide equivalent or superior optical confinement with reduced thickness, thereby simplifying the overall cladding structure

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If InAs/AlSb superlattice cladding layers are used, then optical wave confinement is achieved, but optical loss increases due to low thermal conductivity and refractive index mismatch

Engineering Contradiction:
Improveoptical wave confinementVSAvoidoptical loss
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent optimizes the refractive index parameter by controlling the aluminum composition (x=0.2-0.4) in AlGaAsSb layers to achieve sufficient index contrast for optical confinement while the improved thermal conductivity reduces thermal lensing effects that cause optical loss

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The composite cladding structure combines materials with complementary properties: InAs/AlSb superlattice for lattice matching and AlGaAsSb for enhanced thermal conductivity and optimized refractive index, achieving both confinement and reduced optical loss

Inventive Principle:
Principle #40Composite materials

4Temperature

If cladding layer thickness is reduced to improve thermal dissipation, then thermal dissipation is improved, but optical loss increases due to wave leaking into substrate

Engineering Contradiction:
Improvethermal dissipationVSAvoidoptical loss
Core Design Contradiction:
TemperatureVSLoss of energy

Solution Approach 1:

The patent changes the refractive index parameter of the cladding material by using AlGaAsSb with optimized composition to achieve sufficient index contrast that maintains optical confinement even at reduced thickness, preventing wave leakage into the substrate

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies different material compositions at different locations: AlGaAsSb quaternary layers are strategically positioned in the cladding structure where they provide both optical confinement through refractive index contrast and thermal management through enhanced conductivity

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances thermal dissipation, reduces optical loss, and enables efficient continuous wave operation across a wider wavelength spectrum, including longer infrared regions, with lower power consumption and improved mode confinement.

Implementation Method 1

optical transitions occur between the conduction band and the valence band for photon emission

Methodology Applied
Scientific EffectInterband transitions:

Implementation Method 2

a plasmon waveguide interband laser using a relatively high-doped semiconductor material (e.g. n+-type InAs, doped GaSb or other materials) or/and metal (e.g. Au) as the optical cladding layers to form a plasmon waveguide

Methodology Applied
Scientific EffectPlasmon waveguide:

Data Source

PatentUS9287683B2Semiconductor interband lasers and method of forming
Publication Date: 2016.03.15 THE BOARD OF RGT UNIV OF OKLAHOMA
  • US9287683B2 patent drawing
  • US9287683B2 patent drawing
  • US9287683B2 patent drawing

AI summary

A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.