Semiconductor Interconnect Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor structures face performance issues due to high parasitic capacitance between interconnection layers, leading to increased RC delay and reduced integration density.
Innovation Solution
The semiconductor structure incorporates a first interconnection structure with first and second interconnection layers of varying lengths, along with a third interconnection layer electrically interconnected with the second layer, to reduce parasitic capacitance and increase spacing between interconnection layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If interconnection layers are arranged in conventional semiconductor structures, then electrical interconnection between devices is achieved, but parasitic capacitance between interconnection layers increases
Solution Approach 1:
The patent applies asymmetry by making the first interconnection layer extend beyond the second interconnection layer in the second direction, creating an asymmetric configuration where the first interconnection layer has a greater length than the second interconnection layer. This asymmetric arrangement optimizes electrical interconnection while managing parasitic capacitance between layers.
Solution Approach 2:
The patent utilizes dimensional arrangement by configuring interconnection layers in multiple directions (first direction perpendicular to second direction) and at different vertical levels (first interconnection structure, third interconnection layer). This spatial distribution across dimensions reduces parasitic capacitance while maintaining effective electrical interconnection.
2Productivity
If more devices are integrated in a small area, then integration density increases, but spacing between interconnection layers decreases
Solution Approach 1:
The patent achieves high integration density by utilizing three-dimensional spatial arrangement of interconnection layers at different vertical levels and horizontal positions. The first interconnection structure and third interconnection layer are positioned at different vertical distances from the substrate, enabling dense integration while maintaining adequate spacing to control parasitic capacitance.
Solution Approach 2:
The patent segments the interconnection system into multiple distinct layers (first interconnection structure with first and second interconnection layers, and third interconnection layer) with different configurations and functions. This segmentation allows each layer to be optimized independently for density and capacitance management.
3Speed
If RC delay is reduced, then signal transmission speed improves, but parasitic capacitance must be minimized
Solution Approach 1:
The asymmetric configuration of the first interconnection layer extending beyond the second interconnection layer optimizes the electrical path and reduces parasitic capacitance, thereby decreasing RC delay and improving signal transmission speed through the interconnection structure.
Solution Approach 2:
The third interconnection layer serves as an intermediary structure positioned at a vertical distance from the first interconnection structure. This intermediate layer provides electrical interconnection while maintaining spacing that reduces parasitic capacitance, facilitating faster signal transmission.
Data Source
AI summary
A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes a substrate structure including a device region, a first interconnection structure, and a plurality of third interconnection layers. The device region includes a plurality of first regions and one or more second regions that are arranged along a first direction. The first interconnection structure includes a plurality of first interconnection layers and a plurality of second interconnection layers that are extended along a second direction. A first interconnection layer has a length greater than a second interconnection layer in the second direction, and the first direction is perpendicular to the second direction. A third interconnection layer is disposed over the second region, and the third interconnection layer is electrically interconnected with the second interconnection layer. The third interconnection layer has a length greater than the second interconnection layer in the second direction.