Semiconductor Interconnect Capping Structure for RC Delay Control
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Solution Overview
Problem
As the degree of integration of semiconductor devices increases, the area available for metal interconnections and dielectric material between them decreases, leading to potential defects and operational issues, necessitating improved techniques to ensure proper device operation and reduce faulty devices due to dielectric material defects.
Innovation Solution
A semiconductor device with a capping layer and sacrificial layer is fabricated, including an inter-layer dielectric layer, a capping layer over the inter-layer dielectric layer, a contact plug penetrating the dielectric layer, and a through electrode extending into the substrate, with a method involving forming a trench, filling it with a sacrificial layer, and removing it to create a metal interconnection and through electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration of semiconductor devices is increased, then the device functionality and capacity are improved, but the area available for metal interconnections and dielectric material decreases, leading to potential defects
Solution Approach 1:
The patent introduces a capping layer structure that extends vertically over the metal interconnection, transforming a two-dimensional planar layout problem into a three-dimensional structure. This allows the metal interconnection to be covered and protected by the capping layer, effectively utilizing vertical space to maintain adequate dielectric material areas while supporting higher device integration density.
Solution Approach 2:
The capping layer acts as an intermediary element between the metal interconnection and the surrounding dielectric material. It provides a protective interface that prevents direct exposure of the metal interconnection, reducing the risk of defects while allowing the system to achieve higher integration without proportionally increasing the planar area requirements.
2Area of stationary object
If the area for dielectric material is reduced due to increased integration, then space is saved, but the likelihood of faulty devices due to dielectric material defects increases
Solution Approach 1:
The capping layer is formed beforehand to cover and protect the metal interconnection structure. This protective layer acts as a cushion against potential defects, preventing direct exposure of the metal interconnection to the surrounding environment and reducing the likelihood of dielectric material defects even when the overall dielectric material area is reduced due to higher integration density.
Solution Approach 2:
The capping layer serves as a protective intermediary that shields the metal interconnection from direct contact with dielectric material, thereby reducing the risk of interface-related defects. This mediation allows the system to maintain reliability despite reduced dielectric material areas resulting from increased device integration.
3Manufacturing precision
If process defects are reduced through improved techniques, then device quality is improved, but the process complexity increases
Solution Approach 1:
The capping layer is formed in advance during the fabrication process, covering the metal interconnection before subsequent processing steps. This preliminary action ensures that the metal interconnection is protected from potential defects throughout the remaining manufacturing process, improving device quality without requiring complex post-processing interventions.
Solution Approach 2:
The capping layer acts as a protective intermediary that simplifies the overall manufacturing process by preventing defects upfront, rather than requiring complex defect detection and correction procedures later. This approach improves manufacturing precision while keeping the process complexity manageable through a straightforward additional fabrication step.
Data Source
AI summary
A semiconductor device includes: an inter-layer dielectric layer over a substrate including a cell region, a first peripheral region, and a second peripheral region; a capping layer over the inter-layer dielectric layer; a capacitor capped by the inter-layer dielectric layer in the cell region; a contact plug penetrating the inter-layer dielectric layer in the first peripheral region; a metal interconnection formed over the contact plug through the capping layer; and a through electrode penetrating the capping layer and the inter-layer dielectric layer and extending into the substrate in the second peripheral region.