Semiconductor Interconnect Cavities for Shorting-Free Alignment
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Solution Overview
Problem
Current semiconductor device interconnection techniques face challenges in securely joining semiconductor devices with different physical properties, leading to potential shorting and alignment issues during the formation of interconnects, especially in high-density applications where maintaining thermal cycle reliability is crucial.
Innovation Solution
A method involving the formation of contacts on each semiconductor device, followed by the deposition of an insulative layer with defined cavities to confine the contacts and prevent shorting, along with the use of underfill material to ensure mechanical strength and thermal alignment, allowing for precise alignment and secure interconnection without over-squeezing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional interconnection techniques are used to join semiconductor devices, then device attachment is achieved, but shorting and alignment issues occur during interconnect formation
Solution Approach 1:
The insulative layer is formed with defined cavities before the interconnect formation process begins. These cavities are pre-positioned to receive and confine the interconnects, preventing shorting and alignment issues before they can occur during subsequent processing steps.
Solution Approach 2:
The insulative layer acts as an intermediary structure between the semiconductor devices. It provides a controlled environment through its cavities that guide and confine the interconnects, mediating the connection process to prevent harmful shorting while maintaining proper alignment.
2Productivity
If high-density interconnection is implemented, then interconnection density is improved, but maintaining thermal cycle reliability becomes more difficult
Solution Approach 1:
The insulative layer is segmented into multiple discrete cavities, each independently containing an interconnect. This segmentation allows each interconnect to be individually supported and isolated, maintaining reliability even as the overall density of interconnections increases.
Solution Approach 2:
The insulative layer provides localized support and confinement at each cavity position. This local quality control ensures that each interconnect maintains its alignment and electrical isolation independently, enabling high-density configurations while preserving thermal cycle reliability for each individual connection.
3Reliability
If insulative layer with cavities is used to confine contacts, then shorting is prevented, but manufacturing complexity increases
Solution Approach 1:
The insulative layer formation process is merged with the existing semiconductor fabrication process flow. The cavities are defined using standard photolithography and etching techniques that are already part of conventional manufacturing, integrating the shorting prevention function without adding separate complex manufacturing steps.
Data Source
AI summary
Techniques are disclosed for facilitating interconnecting semiconductor devices. In one example, a method of interconnecting a first substrate to a second substrate is provided. The method includes forming a first plurality of contacts on the first substrate. The method further includes forming an insulative layer on the first substrate. The method further includes forming a second plurality of contacts on the second substrate. The method further includes joining the first plurality of contacts to the second plurality of contacts to form interconnects between the first substrate and the second substrate. When the first and second substrates are joined, at least a portion of each of the interconnects is surrounded by the insulative layer. Related systems and devices are also provided.