Semiconductor Interconnect Structure for Electromigration Resistance
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Solution Overview
Problem
The scaling down of MOSFETs in semiconductor devices leads to deteriorated operating characteristics, necessitating improved methods for fabricating devices with superior performance and overcoming integration limitations.
Innovation Solution
A conductive structure in semiconductor devices is designed with a diffusion layer surrounding a barrier and capping layer, utilizing different conductive materials and manganese, and alternately arranged conductive layers to enhance reliability and reduce electromigration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFET sizes are scaled down to increase integration, then device density increases, but operating characteristics deteriorate
Solution Approach 1:
The barrier layer employs a composite structure with multiple conductive materials (e.g., tungsten, cobalt, copper) arranged in specific configurations. This composite approach allows optimization of electrical properties while maintaining structural integrity at scaled dimensions, resolving the contradiction between miniaturization and operating characteristics
Solution Approach 2:
The barrier layer is segmented into multiple distinct conductive layers rather than using a single uniform material. This segmentation enables each layer to perform specific functions (e.g., adhesion, electrical conduction, diffusion barrier), allowing the structure to maintain reliability while scaled down
2Reliability
If complex multi-layer barrier structures are implemented to reduce electromigration, then reliability improves, but manufacturing complexity increases
Solution Approach 1:
The patent optimizes specific parameters of the barrier layer structure, such as layer thicknesses, material compositions, and sequence arrangements. By carefully controlling these parameters, the structure achieves enhanced electromigration resistance without requiring excessive complexity in the overall design
Data Source
AI summary
Example embodiments are directed to a semiconductor device including a conductive structure, and a dielectric layer that surrounds the conductive structure. The conductive structure includes a conductive pattern, a barrier layer in contact with a sidewall and a lower surface of the conductive pattern, a capping layer in contact with an upper surface of the conductive pattern, and a diffusion layer that surrounds the barrier layer and the capping layer. The barrier layer includes a first conductive layer and a second conductive layer that include different conductive materials from each other, the capping layer and the second conductive layer include a same conductive material, the diffusion layer includes manganese (Mn), and the second conductive layer contacts the conductive pattern, the first conductive layer, and the diffusion layer.