Semiconductor Interconnect Layer for Flexible Die Integration
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Solution Overview
Problem
The complexity of manufacturing semiconductor devices at a miniaturized scale leads to issues such as high yield loss, poor reliability of electrical interconnections, and low testing coverage, necessitating improved manufacturing methods and structures to enhance device robustness and reduce costs.
Innovation Solution
The formation of an interconnect layer over a carrier prior to die bonding, allowing for multiple integrity tests and flexible integration of components with different thicknesses, along with concurrent manufacturing processes for the interconnect layer and component dies, which reduces manufacturing cycle time and increases production yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor devices are miniaturized to increase functional density, then the number of interconnected devices per chip area increases, but manufacturing complexity increases causing high yield loss and poor reliability
Solution Approach 1:
The manufacturing process is divided into multiple stages: forming the interconnect layer on the carrier first, then bonding dies subsequently. This segmentation allows independent optimization and testing of each stage, reducing the compounding of defects and improving overall yield and reliability.
Solution Approach 2:
The interconnect layer is formed on the carrier before die bonding occurs. This preliminary action enables integrity testing of the interconnect structure independently, allowing defects to be detected and corrected before die attachment, thereby improving electrical interconnection reliability.
2Productivity
If conventional manufacturing processes are used for miniaturized devices, then processing continues sequentially, but manufacturing cycle time increases and production yield decreases
Solution Approach 1:
The method enables continuous manufacturing by forming the interconnect layer on the carrier and then bonding dies in sequence without requiring complete processing of each die before assembly. This continuous flow reduces manufacturing cycle time and increases production yield.
Solution Approach 2:
The interconnect layer is prepared in advance on the carrier before die bonding. This preliminary preparation allows subsequent die attachment to proceed rapidly without interruption, reducing overall manufacturing cycle time and improving productivity.
3Adaptability or versatility
If components with different thicknesses are integrated using conventional methods, then manufacturing flexibility is limited, but additional processing steps increase manufacturing complexity
Solution Approach 1:
The carrier-based interconnect layer serves multiple functions: it provides electrical interconnection, supports dies of varying thicknesses, and enables integrity testing. This multi-functionality allows flexible integration of components with different thicknesses without adding significant manufacturing complexity.
Data Source
AI summary
A semiconductor package and method of manufacturing the same are provided. A semiconductor package includes an interconnect layer comprising first conductive pads configured as bond pads and second conductive pads configured as test pads, a plurality of conductive pillars over the interconnect layer, and a first semiconductor die bonded to the interconnect layer through the first conductive pads. The semiconductor package also includes an integrated passive device bonded to the interconnect layer through the first conductive pads, wherein the integrated passive device and the first semiconductor die are disposed on a same side of the interconnect layer, a second semiconductor die electrically coupled to the conductive pillars, and an encapsulating material surrounding the first semiconductor die, the integrated passive device and the conductive pillars.