Semiconductor Interconnect Layout Patterns for Stress Migration
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Solution Overview
Problem
The miniaturization of integrated circuits (ICs) has led to stricter design and manufacturing specifications and reliability challenges due to stress migration (SM) failure mechanisms, particularly in interconnect structures, which affect IC performance and reliability as new SM failure modes emerge with reduced IC sizes.
Innovation Solution
The semiconductor device design incorporates specific interconnect structure layouts, including first, second, and third interconnect portions with defined widths and lengths, connected by conductive lines, to reduce stress migration by minimizing grain boundaries and void formation, thereby enhancing manufacturing yield and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If IC size is reduced to achieve miniaturization, then power consumption decreases and functionality increases, but stress migration failure modes emerge affecting reliability
Solution Approach 1:
The patent applies local quality by creating specific interconnect layout patterns with varying geometries (different widths, lengths, and configurations) in different locations of the IC. These localized structural variations are designed to address stress migration issues in specific regions where they are most critical, while maintaining overall miniaturization benefits.
Solution Approach 2:
The interconnect structure is segmented into multiple portions (first interconnect portion, second interconnect portion, third interconnect portion) with different dimensional characteristics. This segmentation allows each segment to be optimized for stress migration resistance independently, preventing uniform failure across the entire interconnect structure.
2Productivity
If interconnect structure is miniaturized, then device density increases, but void formation and grain boundaries increase causing SM failure
Solution Approach 1:
The patent changes geometric parameters of interconnect structures, specifically varying the width and length ratios of different interconnect portions. By adjusting these parameters, the layout optimizes the balance between achieving high device density and minimizing stress migration susceptibility, particularly by controlling grain boundary formation and void propagation pathways.
Solution Approach 2:
The interconnect layout employs asymmetric designs where different portions have different width-to-length ratios rather than uniform dimensions. This asymmetry is strategically designed to disrupt stress migration pathways and reduce void formation, while still achieving the required device density through optimized space utilization.
Data Source
AI summary
A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.