Semiconductor Interconnect Structure Using Non-Active Area Solder Bumps
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Solution Overview
Problem
The limited number of solder bumps in the active area of semiconductor devices restricts the input/output (I/O) terminal count and interconnectivity, especially as semiconductor die become more complex and active areas reduce in size.
Innovation Solution
Forming solder bumps in both the active and non-active areas of the semiconductor wafer, with an encapsulant deposited over the bumps to increase interconnect density and count, allowing for more efficient packaging and interconnectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If solder bumps are only formed in the active area of the semiconductor die, then the manufacturing process is simple, but the I/O terminal count is limited
Solution Approach 1:
The patent extends the solder bump formation from the traditional two-dimensional active area into the third spatial dimension by utilizing the non-active area surrounding the die. This dimensional expansion allows additional solder bumps to be formed in the perimeter region, increasing the total I/O terminal count without compromising the active die area.
Solution Approach 2:
The patent divides the interconnect structure into two distinct segments: solder bumps formed in the active area and solder bumps formed in the non-active area. This segmentation allows each region to serve its specific function while collectively increasing the total interconnect capacity of the semiconductor device.
2Productivity
If the active area of the semiconductor die is reduced to increase component density, then device integration is improved, but the number of solder bumps that can be placed is reduced
Solution Approach 1:
By utilizing the non-active area surrounding the die as an additional spatial region for solder bump formation, the patent compensates for the reduced active area. This dimensional approach allows high component density within the active region while maintaining or increasing the total solder bump count through perimeter placement.
Solution Approach 2:
The patent applies different functional qualities to different regions: the active area is optimized for high-density component placement, while the non-active area is optimized for additional interconnect functions. This local differentiation allows each region to excel at its specific purpose without compromising overall device performance.
3Quantity of substance
If more solder bumps are placed in the active area to increase interconnectivity, then I/O terminal count increases, but bump pitch and manufacturing precision requirements increase
Solution Approach 1:
The patent segments the solder bump placement into active area bumps and non-active area bumps, distributing the total interconnect load across two regions. This segmentation maintains adequate bump pitch within the active area (avoiding excessive precision requirements) while achieving the desired total bump count through additional perimeter placement.
Solution Approach 2:
The patent forms solder bumps in the non-active area beyond what is traditionally required, creating an excessive number of interconnects in this region. This partial action approach ensures that even with relaxed pitch requirements in the non-active zone, the overall interconnect capacity is significantly enhanced.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the solder bump density and interconnect count, enhancing the I/O terminal capacity and interconnectivity of semiconductor devices, supporting more complex and compact semiconductor designs.
Implementation Method 1
forming an encapsulant over the solder bumps
Data Source
AI summary
A semiconductor wafer includes a plurality of semiconductor die. Contact pads are formed on an active area of the semiconductor die and non-active area of the semiconductor wafer between the semiconductor die. Solder bumps are formed on the contact pads in both the active area of the semiconductor die and non-active area of the semiconductor wafer between the semiconductor die. The I/O terminal count of the semiconductor die is increased by forming solder bumps in the non-active area of the wafer. An encapsulant is formed over the solder bumps. The encapsulant provides structural support for the solder bumps formed in the non-active area of the semiconductor wafer. The semiconductor wafer undergoes grinding after forming the encapsulant to expose the solder bumps. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a package substrate with solder paste or socket.