Semiconductor Interconnect Pattern Layout for Tight Pitch Margins
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to degraded process margins and performance due to increased interconnection density and pitch variations between fine interconnections.
Innovation Solution
A semiconductor device design featuring alternating first and second patterns with concave ends, differing pattern densities, and spacer regions to stabilize the photolithography and etching process, reducing dummy patterns and maintaining uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the pitch between interconnections is reduced to increase integration density, then the degree of integration is improved, but the process margin is degraded
Solution Approach 1:
The interconnection structure is segmented into multiple layers with different pitch configurations. First interconnections have a first pitch while second interconnections have a second pitch that is different from the first pitch, allowing each layer to be optimized independently for both density and manufacturability
Solution Approach 2:
The problem is solved by transitioning from a single-layer pitch optimization to a multi-layer pitch optimization. By utilizing vertical stacking (another dimension), the patent achieves high integration density through multiple layers with varying pitches, rather than compressing a single layer to its limit
2Quantity of substance
If the interconnection density is increased to improve performance, then the degree of integration is improved, but performance is degraded due to increased interconnection density
Solution Approach 1:
Different regions of the interconnection structure have different pitch characteristics. First interconnections have a first pitch optimized for their local density requirements, while second interconnections have a second pitch optimized for their local density requirements, allowing local optimization of both density and performance
Solution Approach 2:
The patent uses vertical layering to distribute interconnections across multiple dimensions, reducing the burden on any single layer. This multi-dimensional arrangement allows high overall density while maintaining acceptable local density and performance characteristics
Data Source
AI summary
A semiconductor device includes a lower structure, a first interlayer dielectric (ILD) on the lower structure, first pattern regions extending inside the first ILD in a first direction, the first pattern regions being spaced apart from each other in a second direction perpendicular to the first direction, each of the first pattern regions including at least one first pattern, and both ends of the at least one first pattern in the first direction being concave, and second pattern regions extending inside the first ILD in the first direction, the second pattern regions being spaced apart from each other in the second direction and alternating with the first pattern regions in the second direction, and each of the second pattern regions including at least one second pattern.