Semiconductor Interconnect with Polarity Groups for ESL Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in reducing equivalent series inductance (ESL) and equivalent series resistance (ESR) in integrated passive devices (IPDs), which limits operating frequency and efficiency, respectively, due to the shrinking size of semiconductor devices and increasing parasitic characteristics.
Innovation Solution
The implementation of an integrated passive device (IPD) with an interconnect structure featuring conductive bumps grouped into three or more polarity groups and large vias that are 50% to 90% of the conductive bump area, reducing ESL and ESR by optimizing the design of conductive bumps and vias to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of semiconductor devices is reduced to increase integration density, then more components can be integrated into a given area, but parasitic characteristics (ESL and ESR) increase, limiting operating frequency and efficiency
Solution Approach 1:
The conductive bumps are divided into multiple polarity groups (first polarity group, second polarity group, third polarity group) instead of using a single group. This segmentation allows current to flow through multiple parallel paths, reducing the equivalent series inductance (ESL) and equivalent series resistance (ESR) while maintaining high integration density.
Solution Approach 2:
The patent introduces a vertical dimension to the interconnect structure by stacking multiple conductive bump groups at different locations (first, second, and third polarity groups) and using vias to connect them vertically. This multi-dimensional arrangement reduces parasitic effects by providing shorter current paths and multiple parallel conduction paths without increasing the lateral footprint.
2Device complexity
If conventional interconnect structures with single polarity groups are used, then device structure is simple, but equivalent series inductance (ESL) is high, limiting operating frequency
Solution Approach 1:
The interconnect structure is segmented into multiple polarity groups with distinct first, second, and third conductive bump groups. Each group connects to different polarity terminals, creating multiple parallel current paths that reduce ESL and enable higher operating frequencies despite increased structural complexity.
Solution Approach 2:
Different regions of the device are assigned different polarity groups with optimized local configurations. The first polarity group, second polarity group, and third polarity group are strategically positioned to minimize current path lengths and reduce parasitic inductance in specific local areas, thereby improving overall operating frequency.
3Ease of manufacture
If conventional interconnect structures are used, then manufacturing is simpler, but equivalent series resistance (ESR) is high, reducing device efficiency
Solution Approach 1:
Multiple conductive bump groups (first, second, and third polarity groups) are merged into a unified interconnect structure that works together to reduce ESR. The combination of these groups creates multiple parallel conduction paths, effectively lowering the equivalent series resistance and improving device efficiency while maintaining manufacturability through standardized fabrication processes.
Data Source
AI summary
A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.