Semiconductor Interconnects for Signal Transmission Loss
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Solution Overview
Problem
As semiconductor devices miniaturize, the increased resistance in interconnect wiring leads to higher loss in transmission lines, making it difficult to maintain signal transmission efficiency, especially when transistors and transmission lines are coupled through CMOS processes.
Innovation Solution
A semiconductor device design featuring a multilayer interconnect structure with a first conductor pattern coupled to a ground or power supply, overlapping a transistor region, and a signal line positioned to overlap the conductor pattern, reducing capacitance and leakage, and allowing for improved impedance design and signal transmission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If transistors and transmission line are formed on a chip through CMOS process, then integration is achieved, but interconnect wiring resistance increases leading to higher loss in transmission line
Solution Approach 1:
The patent transitions from planar interconnect wiring to a three-dimensional stacked configuration where the signal line is positioned directly above the transistor drain region in the vertical dimension. This vertical stacking reduces the horizontal wiring distance and enables direct coupling between transistor and transmission line, thereby reducing interconnect resistance and transmission line loss while maintaining CMOS integration.
Solution Approach 2:
The patent implements nested positioning where the signal line is vertically aligned and positioned directly above the transistor drain region, creating a nested spatial relationship. This nested configuration minimizes the distance between connected elements and reduces the number of interconnect layers required, thereby reducing overall resistance and energy loss in the integrated structure.
2Loss of energy
If distance between transistor and signal line is reduced, then loss in transmission line is decreased, but capacitance coupling between them increases
Solution Approach 1:
The patent introduces an interlayer dielectric material as an intermediary between the signal line and the transistor drain region. This dielectric layer acts as a mediator that reduces direct capacitance coupling while allowing the signal line to remain vertically positioned above the drain region, thereby maintaining low transmission line loss without excessive capacitive interference.
Solution Approach 2:
The patent applies different dielectric materials with optimized properties in different regions: a first interlayer dielectric between the signal line and drain region, and a second interlayer dielectric between the drain region and substrate. This local differentiation of dielectric properties allows optimization of both capacitance reduction and signal transmission characteristics in specific regions.
Data Source
AI summary
A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.