Semiconductor Interconnect Step Structure for Short-Circuit Isolation
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Solution Overview
Problem
The increasing demand for high-performance, high-speed, and multi-functional semiconductor devices necessitates the implementation of fine patterns with narrow widths and separation distances, which poses challenges in preventing short circuits between interconnection lines.
Innovation Solution
The semiconductor device incorporates interconnection lines with step structures, including line portions and extension portions that extend perpendicularly to intersect with gate and via structures, ensuring sufficient separation distances and minimizing the risk of short circuits through the use of insulating layers and etch stop layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If interconnection lines are placed closer together to increase integration density, then productivity and device functionality are improved, but the risk of short circuits between lines increases
Solution Approach 1:
The patent introduces a step structure that creates vertical separation between adjacent interconnection lines. Instead of relying solely on horizontal spacing, the lines are positioned at different vertical levels (first line at first level, second line at second level), thereby adding a vertical dimension to the separation strategy. This allows lines to be placed closer horizontally while maintaining adequate isolation through vertical offset, thus resolving the contradiction between high integration density and short circuit prevention.
2Productivity
If fine patterns with narrow widths are implemented to increase integration, then productivity is improved, but manufacturing precision requirements become more stringent
Solution Approach 1:
The step structure transforms the separation problem from a two-dimensional horizontal constraint to a three-dimensional solution. By creating vertical levels, the patent reduces the criticality of horizontal width control, as the vertical offset provides an additional degree of freedom for maintaining line separation. This reduces the stringency of manufacturing precision requirements for narrow line widths.
3Reliability
If separation distance between interconnection lines is increased to prevent short circuits, then reliability is improved, but integration density decreases
Solution Approach 1:
The patent resolves this contradiction by introducing vertical separation through step structures. Adjacent interconnection lines are separated in the vertical dimension (different levels) rather than relying solely on horizontal spacing. This allows adequate separation distance for short circuit prevention while maintaining high integration density through efficient use of three-dimensional space.
4Reliability
If step structures are introduced to separate interconnection lines, then short circuit prevention is improved, but device complexity increases
Solution Approach 1:
The step structure segments the interconnection lines into distinct vertical levels. Each line is positioned on a specific level (first level, second level, etc.), creating clear spatial separation. This segmentation approach simplifies the overall design by organizing lines into discrete tiers, making the complex routing problem more manageable while effectively preventing short circuits through level-based isolation.
Data Source
AI summary
A semiconductor device may include an active region extending in a first direction, a gate structure on the active region and extending in a second direction, a source/drain region on the active region and a side of the gate structure, a contact structure on and electrically connected to the source/drain region, a via structure on and electrically connected to the contact structure, a gate contact structure on and electrically connected to the gate structure, a first signal transmission line structure on the gate structure, and a power transmission line structure on the contact structure. The first signal transmission line structure may include a first line portion extending across the gate structure and a first protrusion portion vertically protruding toward the gate contact structure. The power transmission line structure may include an interconnection portion extending across the gate and contact structures, and an extension portion vertically extending toward the via structure.