Semiconductor Interconnection Structure with Asymmetric Dielectric Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in reducing RC delay due to parasitic capacitance between interconnections, which existing technologies have not adequately addressed.
Innovation Solution
The semiconductor device incorporates a layered structure with an intermediate insulating layer comprising a first material layer with a higher dielectric constant and a second material layer with a lower dielectric constant, along with an etch-stop layer, to reduce parasitic capacitance and enhance electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a low dielectric material is used as an interlayer insulating layer to reduce parasitic capacitance, then RC delay is reduced, but the structural complexity of the insulating layer increases due to the need for multiple material layers with different dielectric constants
Solution Approach 1:
The intermediate insulating layer is segmented into multiple material layers with different dielectric constants. The first intermediate material layer has a higher dielectric constant than the second intermediate material layer, allowing each layer to contribute differently to capacitance reduction while maintaining overall insulation functionality.
Solution Approach 2:
Different regions of the intermediate insulating layer are assigned different dielectric constants based on local requirements. The first intermediate material layer with higher dielectric constant is positioned in specific regions, while the second intermediate material layer with lower dielectric constant is positioned in other regions, optimizing the balance between insulation and capacitance reduction.
2Ease of manufacture
If a single-layer insulating structure is used, then the manufacturing process is simpler, but the ability to reduce parasitic capacitance is insufficient
Solution Approach 1:
The intermediate insulating layer is constructed as a composite structure with the first intermediate material layer and the second intermediate material layer having different dielectric constants. This composite approach enables superior parasitic capacitance reduction compared to single-layer structures, while the layers are integrated into a unified manufacturing process.
Solution Approach 2:
The solution transitions from a single-layer to a multi-layer vertical structure, adding the dimension of layering to the insulating system. This vertical stratification with different dielectric constants enables enhanced capacitance control without fundamentally changing the horizontal manufacturing approach.
3Ease of manufacture
If the intermediate etch-stop layer has uniform thickness, then the manufacturing process is simpler, but the electrical performance optimization is limited
Solution Approach 1:
The intermediate etch-stop layer is designed with asymmetric thickness, where the first portion has a different thickness than the second portion. This asymmetric configuration is strategically implemented to optimize electrical performance by providing different insulation and capacitance characteristics in different regions, while still maintaining manufacturability through established deposition and etching techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces RC delay and improves the electrical performance of semiconductor devices by minimizing parasitic capacitance between interconnections.
Implementation Method 1
a material of the first intermediate material layer has a dielectric constant that is higher than a dielectric constant of a material of the second intermediate material layer
Data Source
AI summary
A semiconductor device includes a lower structure; an intermediate insulating structure on the lower structure; an intermediate interconnection structure penetrating through the intermediate insulating structure; an upper insulating structure on the intermediate insulating structure and the intermediate interconnection structure; and an upper conductive pattern penetrating through the upper insulating structure and electrically connected to the intermediate interconnection structure, wherein the intermediate insulating structure includes an intermediate etch-stop layer and an intermediate insulating layer thereon, the intermediate insulating layer includes first and second intermediate material layers, the second intermediate material layer having an upper surface coplanar with an upper surface of the first intermediate material layer, the intermediate interconnection structure penetrates through the first intermediate material layer and the intermediate etch-stop layer, and a material of the first intermediate material layer has a dielectric constant that is higher than a dielectric constant of a material of the second intermediate material layer.