Semiconductor Interconnection Structures Using Porous Low-k Dielectrics
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing capacitance and resistance in interconnection structures due to high dielectric constants in dielectric layers, which affect the performance and reliability of semiconductor devices.
Innovation Solution
The formation of air gaps within dielectric layers and the use of low-k dielectric materials, such as porous SiCOH and BC, along with specific deposition processes like flowable low-k deposition and spin-on dielectric deposition, to reduce the effective dielectric constant and improve the reliability of interconnection structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric layers are used in interconnection structures, then manufacturing is simpler, but capacitance and resistance increase, reducing device performance
Solution Approach 1:
The patent employs porous low-k dielectric materials (such as porous SiCOH and BC) to replace conventional dense dielectric layers. The porous structure reduces the effective dielectric constant by introducing air voids, thereby lowering capacitance between interconnect lines while maintaining mechanical integrity and manufacturability
Solution Approach 2:
The patent uses composite dielectric structures combining organic and inorganic materials (e.g., SiCOH - silicon carbon oxide hydrogen) with tailored porosity. These composite materials provide optimized electrical properties (lower k-value) while maintaining structural stability and compatibility with standard semiconductor fabrication processes
2Reliability
If air gaps are introduced in dielectric layers to reduce capacitance, then device performance improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms air gaps during the dielectric deposition process itself rather than as a subsequent step. By controlling deposition parameters (such as flowable CVD conditions), the air gaps are created in-situ with precise dimensional control, eliminating the need for separate gap formation processes and reducing manufacturing complexity
Solution Approach 2:
The patent controls the size, distribution, and density of air gaps by adjusting deposition parameters (temperature, pressure, precursor flow rates) during the low-k dielectric formation process. This enables precise tuning of the effective dielectric constant to achieve target capacitance values while maintaining manufacturing robustness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces capacitance and resistance, leading to improved performance and reliability by maintaining the original low dielectric constant of the gap fill layer and enhancing time-dependent dielectric breakdown and voltage breakdown reliability.
Implementation Method 1
The formation of air gaps within dielectric layers and the use of low-k dielectric materials, such as porous SiCOH and BC
Implementation Method 2
specific deposition processes like flowable low-k deposition and spin-on dielectric deposition
Implementation Method 3
specific deposition processes like flowable low-k deposition and spin-on dielectric deposition
Data Source
AI summary
An interconnection structure is provided. The interconnection structure includes an etching-process-free first dielectric layer, a first conductive structure extending within the first dielectric layer, a second dielectric layer formed under the first dielectric layer, and a second conductive structure extending through both the first dielectric layer and the second conductive layer.