Semiconductor Interconnection Structure With Recess-Filled Contact
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Solution Overview
Problem
The resistance of interconnection structures in semiconductor devices increases as the diameter of contact structures decreases, leading to higher overall resistance in the semiconductor device.
Innovation Solution
The interconnection structure includes a substrate, a first insulating interlayer, a first metal pattern passing through the insulating interlayer, a seed metal layer pattern surrounding the first metal pattern, and a second metal pattern directly contacting the seed metal layer pattern and the first metal pattern, which fills the recess between the insulating interlayer and the first metal pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the diameter of contact structures is decreased, then the density of interconnection structures is improved, but the resistance of contact structures is increased
Solution Approach 1:
The patent applies nesting by placing the second metal pattern inside the recess formed by the first metal pattern and first insulating interlayer. This nested configuration allows the second metal pattern to directly contact the first metal pattern at multiple surfaces (upper surface and sidewalls), effectively increasing the contact area and reducing resistance while maintaining a compact structure that supports high density interconnection.
Solution Approach 2:
The patent transitions from a conventional planar contact structure to a three-dimensional structure by forming a recess and placing the second metal pattern within it. This vertical dimensionality change allows the second metal pattern to contact the first metal pattern at multiple points (upper surface and sidewalls), significantly increasing the effective contact area and reducing resistance without increasing the horizontal footprint.
2Productivity
If the diameter of contact structures is decreased, then the integration scale is improved, but the resistance of interconnection structure is increased
Solution Approach 1:
The nested configuration of the second metal pattern within the recess allows for increased contact area between metal layers, reducing resistance. This enables smaller contact structures to be used without compromising electrical performance, thereby supporting higher integration scales and productivity.
Solution Approach 2:
By utilizing the vertical dimension through the recess structure, the patent increases the effective contact area between metal patterns. This allows for reduced contact diameter while maintaining low resistance, enabling higher integration scales without sacrificing electrical reliability.
3Reliability
If the contact area between metal patterns is increased, then the resistance is reduced, but the device complexity is increased
Solution Approach 1:
The patent segments the interconnection structure into distinct functional components: the first metal pattern forming the lower connection, the recess providing the interface, and the second metal pattern forming the upper connection. This segmentation allows each component to be optimized independently while working together to reduce resistance through increased contact area.
Solution Approach 2:
The recess acts as an intermediary structure that facilitates direct contact between the first and second metal patterns. By providing this intermediate space, the recess enables multiple contact surfaces (upper surface and sidewalls of the first metal pattern) without requiring complex external connections, thus reducing resistance while managing device complexity.
Data Source
AI summary
An interconnection structure may include a first insulating interlayer on a substrate, a first metal pattern on the substrate and passing through the first insulating interlayer, a seed metal layer pattern surrounding a portion of a sidewall of the first metal pattern and a bottom of the first metal pattern, and a second metal pattern. The second metal pattern may directly contact an uppermost surface of the seed metal layer pattern, the upper sidewall of the first metal pattern, and the upper surface of the first metal pattern. An upper sidewall and an upper surface of the first metal pattern may be exposed by the seed metal layer pattern. The second metal pattern may fill at least a recess between the first insulating interlayer and the first metal pattern.