Semiconductor Package Interconnection Element Surrounding Structure

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Solution Overview

Problem

Current semiconductor device packages face challenges in maintaining reliable electrical connections between conductive layers separated by insulation/dielectric layers, often resulting in stress-induced cracks at the interface of interconnection elements and conductive pads, which can lead to electrical disconnection and reduced reliability.

Innovation Solution

A substrate design featuring a dielectric layer with a patterned conductive layer and interconnection elements that are surrounded by a ring/annular structure of the conductive pad, mitigating stress and preventing crack formation by embedding the interconnection elements in a three-dimensional manner within the conductive pad, ensuring a solid and regular connection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If interconnection elements are used to connect conductive layers separated by dielectric layers, then electrical connection between layers is achieved, but stress-induced cracks form at the interface reducing reliability

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidinterface strength
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The conductive pad transitions from a two-dimensional planar structure to a three-dimensional structure by extending downward to surround the interconnection element. This dimensional change creates a recess that envelops the interconnection element, providing mechanical support from multiple directions and distributing stress throughout the three-dimensional structure, thereby preventing crack formation at the interface.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The interconnection element is nested within the three-dimensional conductive pad structure. The conductive pad forms a recess that completely surrounds the interconnection element, creating a nested configuration where the interconnection element is embedded within the conductive material. This nesting provides structural support and stress distribution, enhancing the reliability of the electrical connection.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Ease of manufacture

If conventional interconnection structures are used, then manufacturing is simpler, but crack formation leads to electrical disconnection

Engineering Contradiction:
Improvestructure fabrication easeVSAvoidelectrical connection stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The three-dimensional conductive pad structure is formed in advance during the manufacturing process, creating a pre-formed recess that will accommodate the interconnection element. This preliminary structuring ensures that when the interconnection element is subsequently formed or placed, it is automatically surrounded and supported by the conductive pad, preventing crack formation from the outset rather than requiring corrective measures later.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11004779B2Semiconductor device package and a method of manufacturing the same
Publication Date: 2021.05.11 ADVANCED SEMICON ENG INC
  • US11004779B2 patent drawing
  • US11004779B2 patent drawing
  • US11004779B2 patent drawing

AI summary

A substrate includes a first dielectric layer having a first surface and a second surface opposite to the first surface, a first patterned conductive layer adjacent to the first surface of the first dielectric layer and comprising an interconnection structure, and an interconnection element. The interconnection element extends from the first surface of the first dielectric layer to the second surface of the first dielectric layer and is surrounded by the interconnection structure.