Semiconductor Interconnection Structure With Variable Dielectric Insulation
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Solution Overview
Problem
As the degree of integration of semiconductor devices increases, parasitic capacitance between interconnection structures rises, making it difficult to improve their performance due to the decreasing sizes and distances between these structures.
Innovation Solution
The implementation of an intermetal insulating layer with a low-k dielectric material, featuring regions with different dielectric constants, and a specific structure for interconnection structures that include plug portions with varying widths through an etch stop layer and buffer layer, to reduce parasitic capacitance and enhance electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration of semiconductor devices is increased, then the size and density of interconnection structures are improved, but parasitic capacitance between interconnection structures increases
Solution Approach 1:
The intermetal insulating layer is divided into multiple regions with different dielectric constants. Regions closer to interconnection structures use lower-k dielectric materials to reduce parasitic capacitance, while regions farther away can use higher-k materials. This spatial variation in material properties optimizes the balance between integration density and parasitic capacitance reduction.
Solution Approach 2:
The patent employs composite dielectric structures combining multiple materials with different dielectric constants within the intermetal insulating layer. This composite approach allows simultaneous optimization of electrical performance (low parasitic capacitance near conductors) and structural integrity (adequate insulation elsewhere), enabling higher integration without excessive parasitic effects.
2Area of stationary object
If the distance between interconnection structures is decreased, then the area and density are improved, but parasitic capacitance increases
Solution Approach 1:
Different regions of the intermetal insulating layer are assigned different dielectric constants based on their proximity to interconnection structures. This local optimization allows tighter spacing between structures while maintaining low parasitic capacitance in critical regions through lower-k materials.
Solution Approach 2:
The dielectric constant parameter is varied spatially within the intermetal insulating layer. By changing this material parameter from region to region, the patent achieves reduced parasitic capacitance in high-density areas while maintaining overall structural integrity and electrical performance.
3Ease of manufacture
If uniform dielectric material is used in the intermetal insulating layer, then the manufacturing simplicity is maintained, but the parasitic capacitance reduction is insufficient
Solution Approach 1:
The intermetal insulating layer incorporates regions with different dielectric constants tailored to local requirements. Regions adjacent to interconnection structures use lower-k materials for parasitic capacitance reduction, while other regions use different materials, optimizing electrical performance without significantly complicating the manufacturing process.
Solution Approach 2:
The intermetal insulating layer is segmented into multiple regions with different dielectric properties. This segmentation allows targeted optimization of parasitic capacitance reduction in critical areas while maintaining manufacturing feasibility through systematic material deposition and patterning processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces parasitic capacitance and improves the RC delay characteristics and durability of semiconductor devices, leading to enhanced performance and electrical characteristics.
Implementation Method 1
an intermetal insulating layer including a low-k dielectric material on the buffer layer
Implementation Method 2
parasitic capacitance between interconnection structures may increase
Data Source
AI summary
Semiconductor devices including an interconnection structure are provided. The devices may include an etch stop layer on a lower structure including a contact structure, a buffer layer on the etch stop layer, an intermetal insulating layer including a low-k dielectric material on the buffer layer. The intermetal insulating layer may include a first region having a first dielectric constant and a second region having a second dielectric constant different from the first dielectric constant. The device may also include interconnection structure including a plug portion electrically connected to the contact structure and an interconnection portion on the plug portion. The plug portion may include a first portion extending through the etch stop layer and a second portion that is in the intermetal insulating layer and has a width greater than a width of the first portion. The interconnection portion may include opposing lateral surfaces surrounded by the intermetal insulating layer.