Semiconductor Packaging Interface Curvature for Delamination Control

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Solution Overview

Problem

The manufacturing of miniaturized semiconductor devices faces challenges such as delamination and bondability issues due to differences in thermal properties of various materials, leading to increased complexity, yield loss, and higher manufacturing costs.

Innovation Solution

A semiconductor structure with a molding having a curved surface adjacent to the die is introduced, which mitigates the step height difference between the molding and the die, preventing delamination and improving bondability through a plasma etching process that forms a smooth curvature, and a method involving sacrificial layers and polymers for encapsulation and attachment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If multiple layers and components with different materials are stacked to minimize device size, then the semiconductor device achieves miniaturization and multifunctionality, but delamination and bondability issues occur due to different thermal properties

Engineering Contradiction:
Improvedevice sizeVSAvoidbondability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent introduces a curved surface (rounded transition) at the interface between the molding and the die, replacing the traditional sharp step height difference. This curvature distributes the thermal and mechanical stress more evenly across the interface, preventing delamination while maintaining the miniaturized structure. The curved surface acts as a stress-relief feature that accommodates thermal expansion differences between layers.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Adaptability or versatility

If manufacturing operations are increased to achieve high performance and miniaturization, then device functionality and integration are improved, but manufacturing complexity increases leading to poor reliability and delamination

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent performs the plasma etching operation to create the curved surface transition before final assembly and bonding steps. This preliminary action prepares the interface in advance to accommodate subsequent thermal and mechanical stresses, preventing delamination issues that would otherwise require complex post-processing or rework. The curved surface is formed as a preliminary structural feature that simplifies later manufacturing steps.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If step height difference between molding and die is reduced to prevent delamination, then bondability improves, but additional manufacturing steps are required increasing complexity

Engineering Contradiction:
ImprovebondabilityVSAvoidmanufacturing steps
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent replaces traditional mechanical methods of step height reduction (such as multiple grinding or polishing steps) with a plasma etching process. This substitution achieves the same structural modification (curved surface formation) with a single step that provides better control and consistency, reducing overall manufacturing complexity while improving bondability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the reliability and bondability of semiconductor components, reducing delamination and manufacturing costs by smoothing the transition between the die and the molding, thereby improving the overall efficiency and yield of semiconductor device production.

Implementation Method 1

a plasma etching process that forms a smooth curvature

Methodology Applied
Scientific EffectPlasma etching: Plasma

Data Source

PatentUS12119229B2Method of manufacturing semiconductor structure
Publication Date: 2024.10.15 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12119229B2 patent drawing
  • US12119229B2 patent drawing
  • US12119229B2 patent drawing

AI summary

A method of manufacturing a semiconductor structure includes receiving a die comprising a top surface and a sacrificial layer covering the top surface; disposing a molding surrounding the die; removing the sacrificial layer from the die; disposing a polymer over the die and the molding, wherein the polymer has a first bottom surface contacting the die and a second bottom surface contacting the molding, and the first bottom surface is at a level substantially same as the second bottom surface.