Semiconductor Interface Defect Burying via Disorganized Layer
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Solution Overview
Problem
Direct bonding of semiconductor substrates with different crystal orientations often results in crystal defects at the interface, which impair bonding behavior and the quality of subsequent components.
Innovation Solution
A method involving the formation of a disorganized layer at the interface by implanting atomic species through one substrate and subsequent heat treatment to reorganize the crystal lattice, forcing defects deeper into the substrate, thereby improving interface quality and bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If direct bonding is performed between substrates with different crystal orientations, then bonding between layers is achieved, but crystal defects such as dislocations are formed at the interface
Solution Approach 1:
The patent applies preliminary surface treatments to the substrates before bonding to modify their surface properties. This includes hydrophilic or hydrophobic treatments that prepare the surfaces for optimal bonding while minimizing defect formation at the interface
Solution Approach 2:
The patent introduces an intermediate oxide layer at the bonding interface. This thin oxide film acts as a mediator that facilitates bonding between substrates with different crystal orientations while reducing the formation of dislocations and other crystal defects
2Reliability
If surface treatments are applied to improve bonding behavior, then bonding quality is enhanced, but oxygen precipitates are formed at the interface
Solution Approach 1:
The patent carefully controls the thickness and composition parameters of the oxide layer to optimize bonding behavior while minimizing oxygen precipitate formation. By adjusting oxide thickness to several atomic layers (5-10 angströms), the patent achieves reliable bonding without excessive oxygen aggregation
Solution Approach 2:
The patent applies surface treatments selectively to specific regions or controls the oxidation to occur only at the bonding interface rather than throughout the bulk material. This localized approach ensures improved bonding behavior while limiting oxygen precipitate formation to minimal concentrations
3Ease of manufacture
If oxygen atoms aggregate in the substrate lattice, then bonding is achieved, but defects impair interface quality and component performance
Solution Approach 1:
The patent converts the potentially harmful effect of oxygen atoms into a beneficial bonding mechanism. By controlling oxygen to form a thin oxide layer at the interface rather than allowing random aggregation in the bulk, the oxygen that would otherwise create defects instead facilitates reliable bonding while maintaining interface quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively shifts crystal defects away from the interface, enhancing the quality and performance of semiconductor structures by burying them deep within the substrate, thus improving the bonding between substrates and maintaining the crystalline characteristics of both substrates.
Implementation Method 1
forming a disorganized layer that includes the interface and has a crystal lattice at least a part of which is disorganized
Implementation Method 2
reorganizing the crystal lattice of the disorganized layer in order to force the defects back into the substrate adjacent thereto
Data Source
AI summary
The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.