Semiconductor Device Interface Defect Termination
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Solution Overview
Problem
In three-dimensional semiconductor memory, crystal defects at the interface between the tunnel insulating film and the channel lead to increased channel resistance and decreased electron mobility.
Innovation Solution
Incorporating defect termination elements, such as fluorine or chlorine, at the interface between the tunnel insulating film and the channel to terminate crystal defects, thereby stabilizing the interface and reducing channel resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a tunnel insulating film and channel are formed in three-dimensional semiconductor memory, then the memory structure is established, but crystal defects at the interface increase channel resistance and decrease electron mobility
Solution Approach 1:
A defect termination layer is introduced as an intermediary between the tunnel insulating film and the channel. This layer contains defect termination elements (such as fluorine, chlorine, or bromine) that bind to dangling silicon bonds at the interface, preventing crystal defects from increasing channel resistance and improving electron mobility.
Solution Approach 2:
The chemical composition at the interface is modified by introducing defect termination elements with different bonding characteristics. These elements change the interface parameters by saturating dangling bonds, thereby reducing interface states and improving electrical characteristics without altering the overall device structure.
2Ease of manufacture
If the interface between tunnel insulating film and channel is formed without defect termination, then the manufacturing process is simpler, but crystal defects increase and degrade device performance
Solution Approach 1:
The defect termination layer is formed in advance during the manufacturing process, specifically after forming the tunnel insulating film and before forming the channel. This preliminary action ensures that defect termination elements are already in place to capture dangling bonds, preventing interface degradation without requiring additional complex post-processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of defect termination elements effectively reduces channel resistance and improves electron mobility by binding to dangling silicon bonds, enhancing the reliability of the memory cell film.
Implementation Method 1
Incorporating defect termination elements, such as fluorine or chlorine, at the interface between the tunnel insulating film and the channel to terminate crystal defects, thereby stabilizing the interface and reducing channel resistance
Data Source
AI summary
A semiconductor device including a stacked body that includes insulating layers and conductive layers that are alternately stacked, a first film provided inside a recess portion that penetrates through the stacked body, a second film provided on a surface of the first film, a third film provided on a surface of the second film, and a fourth film provided on a surface of the third film. An average concentration of a halogen element per unit area in the third film and the fourth film is lower than an average concentration of the halogen element per unit area at an interface between the third film and the fourth film.