Semiconductor Electrode Interface Layer to Prevent Edge Peeling
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Solution Overview
Problem
Existing semiconductor devices face issues with poor adhesion between the electrode and the substrate, leading to peeling of the electrode, especially from the outer peripheral portion, and the formation of a crushed layer during grinding, which weakens the device.
Innovation Solution
A semiconductor device is designed with a mixed member containing semiconductor and metal materials, placed on the substrate surface in contact with the electrode, and a portion of the substrate surface is exposed at the end, enhancing adhesion and resisting peeling during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the electrode is directly placed on the substrate to reduce on-resistance, then the adhesion property should be high, but the electrode peels from the outer peripheral portion during subsequent processes
Solution Approach 1:
A mixed member containing both semiconductor material and metal material is introduced as an intermediary layer between the electrode and the substrate. This mixed member is formed by co-depositing metal material and semiconductor material, creating a gradient structure that provides both strong adhesion to the substrate and good electrical conductivity for the electrode, thereby preventing peeling during subsequent processing steps
2Manufacturing precision
If the substrate surface is ground to improve flatness, then a crushed layer is formed, but this crushed layer weakens the device structure
Solution Approach 1:
The mixed member is formed on the substrate surface before the grinding process. This preliminary formation of the mixed member protects the substrate surface during subsequent grinding operations, allowing the substrate to be ground to the required flatness without forming a weakened crushed layer, as the mixed member acts as a protective interface layer
Data Source
AI summary
Provided is a semiconductor device including: a substrate containing a semiconductor material; an electrode provided on a substrate surface of the substrate, the electrode containing a metal material; and a mixed member provided on the substrate surface to be in contact with the electrode, the mixed member containing the semiconductor material and the metal material, in which a portion of the substrate surface is exposed at an end of the substrate.