Semiconductor Device with Impurity-Zoned Interface for On-Resistance Reduction
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Solution Overview
Problem
Semiconductor devices face challenges in reducing on-resistance, particularly when downscaled, due to increased current flow through bulk semiconductor regions, leading to high on-resistance and poor normally-off characteristics.
Innovation Solution
The semiconductor device design includes a first semiconductor region with a first impurity concentration, a second semiconductor region without impurities or with lower impurity concentration, and a third semiconductor region with a higher impurity concentration, aligned in specific directions, along with insulating regions, to facilitate current flow through interface portions, reducing on-resistance and maintaining good normally-off characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If current flows through bulk semiconductor regions in downscaled devices, then device size is reduced, but on-resistance increases
Solution Approach 1:
The patent applies local quality by creating distinct impurity concentration zones within the semiconductor structure. Specifically, it forms a first semiconductor region with higher impurity concentration and a second semiconductor region with lower impurity concentration, allowing different parts of the device to have optimized electrical properties for their specific functions, thereby reducing on-resistance while maintaining compact size
Solution Approach 2:
The patent employs composite materials by combining semiconductor regions with different impurity concentrations and compositions. The structure integrates AlGaN layers with varying aluminum compositions and impurity levels, creating a composite semiconductor system that optimizes both conductivity and device size
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second and third electrodes, first, second, third, and fourth semiconductor regions, and an insulating portion. The first electrode includes first and second electrode portions. The first semiconductor region includes first, second, and third semiconductor portions. The first semiconductor portion is provided between the first electrode portion and the second electrode. The second semiconductor portion is provided between the second electrode portion and the third electrode. The third semiconductor portion is provided between the first and second semiconductor portions. The second semiconductor region is provided between the first semiconductor portion and the second electrode. The third semiconductor region is positioned between the second semiconductor region and the third electrode. The insulating portion includes first and second insulating regions. At least a portion of the fourth semiconductor region is provided between the second semiconductor region and the second electrode.