Semiconductor Interlayer Insulating Film Void Support via Urea Polymer Depolymerization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The mechanical strength of interlayer insulating films in semiconductor devices is compromised due to voids formed in the interlayer insulating film, which are not supported by another film, leading to reduced reliability.
Innovation Solution
A semiconductor device manufacturing method involving the burial of voids in the substrate with polymers having urea bonds, followed by forming an oxide film and desorbing the polymer through the oxide film to secure the mechanical strength of the interlayer insulating film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If voids are used as burying defects in the interlayer insulating film to reduce the relative dielectric constant, then the dielectric constant is reduced, but the mechanical strength of the interlayer insulating film deteriorates
Solution Approach 1:
An oxide film is introduced as an intermediary layer between the void and the interlayer insulating film. This oxide film acts as a mediator that provides mechanical support to the void region, preventing the void from directly compromising the structural integrity of the insulating film while maintaining the low dielectric constant property.
Solution Approach 2:
The oxide film is formed on the void surface before the interlayer insulating film is deposited. This preliminary cushioning layer prepares the void surface to receive the insulating film material, distributing mechanical stresses and preventing direct contact between the void and the insulating film, thereby preserving mechanical strength.
2Strength
If polymers are used to bury voids in the substrate, then the voids are filled and mechanical support is provided, but the polymer must be subsequently removed to maintain the low dielectric constant
Solution Approach 1:
The polymer is deposited as a preliminary temporary structure to provide mechanical support during subsequent processing steps. The polymer serves its structural function first, and then is selectively removed through depolymerization. This preliminary action allows the fabrication process to proceed with adequate mechanical support before the final low-dielectric structure is formed.
Solution Approach 2:
The polymer is intentionally deposited and then completely removed through thermal depolymerization. This temporary material is discarded after serving its purpose of providing mechanical support during fabrication, allowing the void structure to be formed with the desired low dielectric constant in the final device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively secures the mechanical strength of the interlayer insulating film by supporting the voids with polymers and desorbing them through an oxide film, enhancing the film's reliability and reducing its relative dielectric constant.
Implementation Method 1
desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film
Implementation Method 2
desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film
Data Source
AI summary
A semiconductor device manufacturing method includes burying a void formed in a substrate with a polymer having a urea bond; forming an oxide film on the substrate; and desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film.