Semiconductor Device With Interleaved Source And Drain Fingers
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Solution Overview
Problem
Conventional semiconductor devices, such as FETs, face limitations in current flow due to tolerable current density, restricting the output power and requiring larger electrode sizes, which complicates downsizing and increases signal loss.
Innovation Solution
The semiconductor device features source and drain electrodes with stepwise side portions and symmetrical shapes, along with bent gate electrodes, to maintain constant current flow and reduce size, while increasing the number of steps and gate electrodes to enhance output power and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the electrode size is increased to handle higher current, then the tolerable current density is improved, but the device size increases and signal loss increases
Solution Approach 1:
The source and drain electrodes are divided into multiple fingers (source fingers and drain fingers) that are interleaved with gate electrodes. This segmentation allows the current to be distributed across multiple parallel paths, increasing the total tolerable current density without requiring a single large electrode, thus maintaining compact device size.
2Reliability
If the electrode size is increased to handle higher current, then the tolerable current density is improved, but signal loss increases
Solution Approach 1:
By segmenting the electrodes into multiple fingers, the current density is distributed evenly across all finger paths. This prevents localized overheating and reduces resistive losses, thereby minimizing signal loss while maintaining high current handling capability.
3Reliability
If multi-finger arrangement is used to increase current capacity, then the tolerable current density is improved, but device complexity increases
Solution Approach 1:
The source fingers, drain fingers, and gate electrodes are merged into a single interleaved multi-finger structure. This integrated arrangement achieves high current capacity through multiple current paths while maintaining a compact and relatively simple overall device layout, avoiding the need for separate complex electrode systems.
Data Source
AI summary
A semiconductor device includes source electrodes having source fingers, drain electrodes having drain fingers, and gate electrodes having bent portions between steps formed in stepwise side portions of source fingers and steps formed in stepwise side portions of drain fingers and being bent in the bent portions along the source fingers and the drain fingers. A shape of the stepwise side portion of one source finger and that of the stepwise portion of the corresponding drain finger are symmetrical about a midpoint of an imaginary line that connects the other end of the source finger and the other end of the corresponding drain finger.