Semiconductor Device Intermediate Layer Oxygen Segmentation

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Solution Overview

Problem

Photodetection devices with adhesion layers between electrodes and photoelectric conversion layers suffer from crosstalk issues, particularly in semiconductor devices with multiple pixels, which affects the accuracy of charge detection and light use efficiency.

Innovation Solution

A semiconductor device design featuring a substrate with first and second intermediate layers, where the second intermediate layer has a higher oxygen content than the first, positioned between electrodes and a photoelectric conversion layer to reduce crosstalk while maintaining carrier transfer efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If an adhesion layer is introduced between the electrode and the photoelectric conversion layer, then the adhesion strength is improved, but crosstalk occurs between pixels

Engineering Contradiction:
Improveadhesion strengthVSAvoidcrosstalk
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The adhesion layer is divided into multiple regions with different oxygen concentrations: a first region with lower oxygen concentration positioned over the electrode to provide adhesion, and a second region with higher oxygen concentration positioned in the gap between electrodes to prevent crosstalk. This spatial segmentation allows each region to fulfill its specific function independently.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the adhesion layer are assigned different local properties (oxygen concentrations) to perform different functions. The first region has lower oxygen concentration for adhesion, while the second region has higher oxygen concentration for crosstalk prevention. This local quality differentiation resolves the contradiction between adhesion and crosstalk prevention.

Inventive Principle:
Principle #3Local quality

2Reliability

If the adhesion layer has high electrical conductivity to improve carrier transfer, then carrier transfer efficiency is improved, but crosstalk between pixels increases

Engineering Contradiction:
Improvecarrier transfer efficiencyVSAvoidcrosstalk
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The adhesion layer is segmented into conductive regions (first region with lower oxygen concentration) for carrier transfer and insulating regions (second region with higher oxygen concentration) for crosstalk prevention. This segmentation allows the system to achieve both high carrier transfer efficiency and low crosstalk simultaneously.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The oxygen concentration parameter is varied spatially within the adhesion layer to control electrical conductivity. By changing the oxygen concentration from low in the first region to high in the second region, the electrical conductivity is modulated to achieve the desired balance between carrier transfer and crosstalk prevention.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively reduces crosstalk between pixels, enhancing the accuracy of charge detection and light use efficiency by controlling the electrical conductivity of the intermediate layers, thereby improving the overall performance of the photodetection device.

Implementation Method 1

a content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer

Methodology Applied
Scientific EffectElectrical resistance: Electrical Resistance

Data Source

PatentUS11569277B2Semiconductor device
Publication Date: 2023.01.31 CANON KK
  • US11569277B2 patent drawing
  • US11569277B2 patent drawing
  • US11569277B2 patent drawing

AI summary

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.