Semiconductor Interposer Package With Fine-Pitch Chiplet Wiring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Chiplet-based semiconductor packages face challenges with low integration density and performance due to the packaging process, which limits their ability to meet the demands of smaller, faster, and more functional electronics.
Innovation Solution
A semiconductor package design that includes a substrate with insulating layers and semiconductor interposers with fine pitch wiring patterns, allowing for higher integration density and improved performance by enabling efficient electrical connections between multiple electronic components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If chiplet-based package is used to form system-on-chip, then design flexibility and functionality are improved, but integration density and performance deteriorate due to packaging process limitations
Solution Approach 1:
The patent divides the semiconductor device into multiple independent chiplets (first chiplet, second chiplet, third chiplet) that can be manufactured separately and then integrated through the interposer. This segmentation allows each chiplet to be optimized independently while achieving high integration density through the standardized interposer interface with fine pitch wiring patterns.
Solution Approach 2:
The patent introduces a semiconductor interposer as an intermediary component between multiple chiplets. The interposer provides fine pitch wiring patterns that enable high-density interconnections, overcoming the limitations of traditional packaging processes. The interposer acts as a mediator that transforms the connection interface to achieve higher integration density.
2Adaptability or versatility
If multiple small chips are interconnected through traditional packaging process, then system functionality is achieved, but performance and integration density deteriorate
Solution Approach 1:
The patent changes the critical parameter of interconnection pitch from traditional coarse packaging traces to fine pitch wiring patterns on the semiconductor interposer. This parameter change enables significantly higher signal density and improved performance by reducing the distance and complexity of interconnections between chiplets.
Solution Approach 2:
The patent transitions from planar packaging connections to a three-dimensional integration architecture where chiplets are stacked or arranged in multiple layers connected through the interposer. This dimensional change allows for higher performance by shortening signal paths and enabling parallel communication channels.
3Manufacturing precision
If fine pitch wiring patterns are implemented on semiconductor interposer, then integration density is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the manufacturing process into distinct stages: fabricating the semiconductor interposer with fine pitch wiring patterns in a controlled semiconductor manufacturing environment, then separately mounting chiplets onto the interposer. This segmentation allows the complex fine pitch wiring to be manufactured using precise semiconductor processes rather than traditional packaging processes.
Solution Approach 2:
The semiconductor interposer is designed to provide self-alignment and self-connection features through its fine pitch wiring patterns and interface structures. Once the chiplets are mounted on the interposer, the electrical connections are automatically established through the pre-configured wiring patterns, reducing the complexity of subsequent assembly processes.
Data Source
AI summary
A semiconductor package and a method for making the same are provided. The semiconductor package may include: a substrate having a first surface and a second surface opposite to the first surface; a first insulating layer disposed on the first surface of the substrate and having a first concave portion; a first semiconductor interposer disposed in the first concave portion of the first insulating layer, the first semiconductor interposer including a first semiconductor layer and a plurality of first wiring patterns formed on the first semiconductor layer; a first electronic component overlapping with a first portion of the first semiconductor interposer and electrically connected with the first wiring patterns of the first semiconductor interposer; and a second electronic component overlapping with a second portion of the first semiconductor interposer and electrically connected with the first wiring patterns of the first semiconductor interposer.