Semiconductor Structure With Interposer And Doped Plate
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Solution Overview
Problem
The increasing complexity of semiconductive devices, particularly MEMS devices, leads to manufacturing challenges such as high yield loss, warpage, and low signal-to-noise ratio (SNR) due to the complexity of processing and smaller dimensions, necessitating improvements in device structure and manufacturing methods to enhance performance and reduce costs.
Innovation Solution
A semiconductor structure with a MEMS device featuring a stationary plate and movable membrane supported by a handle substrate, where the plate is doped for stiffness and includes apertures to prevent bending, and an anti-stiction coating is applied to maintain straightness and reduce stiction, while a method involving sacrificial layers and conductive structures is used to integrate the MEMS device with a CMOS substrate, reducing overall thickness and form factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the geometric size of components is decreased to increase functional density, then the number of interconnected devices per chip area increases, but manufacturing complexity increases causing high yield loss and warpage
Solution Approach 1:
The device is divided into separate modules: a first substrate containing first circuitry, a second substrate containing second circuitry, and an interposer substrate with through-conductors connecting them. This segmentation allows each substrate to be manufactured and tested independently, reducing the complexity of manufacturing highly integrated devices and improving yield by isolating defects to specific modules.
Solution Approach 2:
An interposer substrate is introduced as an intermediary component between the first and second substrates. The interposer contains through-conductors that electrically connect pads on the first substrate to pads on the second substrate, enabling complex inter-substrate connections while simplifying the manufacturing process and reducing warpage issues.
2Area of moving object
If the geometric size of components is decreased to increase functional density, then the number of interconnected devices per chip area increases, but yield loss increases due to manufacturing complexity
Solution Approach 1:
The device is divided into separate modules: a first substrate containing first circuitry, a second substrate containing second circuitry, and an interposer substrate with through-conductors connecting them. This segmentation allows each substrate to be manufactured and tested independently, reducing the complexity of manufacturing highly integrated devices and improving yield by isolating defects to specific modules.
Solution Approach 2:
An interposer substrate is introduced as an intermediary component between the first and second substrates. The interposer contains through-conductors that electrically connect pads on the first substrate to pads on the second substrate, enabling complex inter-substrate connections while simplifying the manufacturing process and reducing warpage issues.
3Area of moving object
If the geometric size of components is decreased to increase functional density, then the number of interconnected devices per chip area increases, but warpage occurs due to manufacturing complexity
Solution Approach 1:
The device is divided into separate modules: a first substrate containing first circuitry, a second substrate containing second circuitry, and an interposer substrate with through-conductors connecting them. This segmentation allows each substrate to be manufactured and tested independently, reducing the complexity of manufacturing highly integrated devices and improving yield by isolating defects to specific modules.
Solution Approach 2:
An interposer substrate is introduced as an intermediary component between the first and second substrates. The interposer contains through-conductors that electrically connect pads on the first substrate to pads on the second substrate, enabling complex inter-substrate connections while simplifying the manufacturing process and reducing warpage issues.
4Adaptability or versatility
If device structure becomes more complicated to increase functionality, then the amount of circuitries increases, but signal to noise ratio decreases due to manufacturing complexity
Solution Approach 1:
The device is divided into separate modules: a first substrate containing first circuitry, a second substrate containing second circuitry, and an interposer substrate with through-conductors connecting them. This segmentation allows each substrate to be manufactured and tested independently, reducing the complexity of manufacturing highly integrated devices and improving yield by isolating defects to specific modules.
Solution Approach 2:
An interposer substrate is introduced as an intermediary component between the first and second substrates. The interposer contains through-conductors that electrically connect pads on the first substrate to pads on the second substrate, enabling complex inter-substrate connections while simplifying the manufacturing process and reducing warpage issues.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the signal-to-noise ratio by maintaining plate straightness and reducing stiction, while reducing the device's thickness and form factor, thereby improving manufacturing efficiency and performance.
Implementation Method 1
the plate is doped for stiffness
Implementation Method 2
an anti-stiction coating is applied to maintain straightness and reduce stiction
Data Source
AI summary
In the present disclosure a semiconductor device comprises a plate including a plurality of apertures. The semiconductor device also comprises a membrane disposed opposite to the plate and including a plurality of corrugations, a dielectric surrounding and covering an edge of the membrane, and a substrate. The semiconductor device further includes a metallic conductor comprising a first portion extending through the dielectric, and a second portion over the substrate, where the second portion is bonded with the first portion.