Interposers for microelectronic devices
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Solution Overview
Problem
Current interposer technologies face challenges in providing high bandwidth communication channels and resistance to physical stress, particularly due to limitations in line spacing and thermal expansion mismatch between organic and semiconductor materials, which hinder the integration of multiple semiconductor die in advanced microelectronic devices.
Innovation Solution
The development of semiconductor interposers with a silicon core and multiple redistribution layers on each side, incorporating vertical through-silicon vias and passive/active circuit elements, which enable high bandwidth communication and enhanced resistance to cracking and stress by using polyimide dielectric materials and symmetrical redistribution structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If organic interposer materials are used, then resistance to cracking and physical stress is improved, but line spacing capability deteriorates (cannot achieve less than 10/10 μLS)
Solution Approach 1:
The patent employs composite material structures combining organic interposer materials with embedded semiconductor components and conductive elements. This allows the organic matrix to provide stress resistance while integrated semiconductor regions enable fine line spacing capabilities, resolving the contradiction between material resilience and manufacturing precision.
2Stability of the object's composition
If organic interposer materials are used, then mechanical resilience is improved, but coefficient of thermal expansion mismatch with semiconductor die increases
Solution Approach 1:
The patent applies local quality by creating regions with different material properties within the interposer structure. Specific areas incorporate materials or structures with CTE matched to semiconductor die, while other regions maintain the resilient organic material properties, thereby locally addressing thermal expansion issues without compromising overall mechanical resilience.
3Manufacturing precision
If silicon interposers are used, then line spacing capability is improved (can achieve less than 5/5 μLS), but resistance to cracking and physical stress deteriorates
Solution Approach 1:
The patent segments the interposer into distinct functional regions: brittle silicon areas providing fine line spacing and organic resilient areas providing crack resistance. This segmentation allows each material to perform its optimal function while being integrated into a unified interposer structure that achieves both precision and durability.
4Speed
If tighter line spacing is implemented for high bandwidth communication, then communication bandwidth is improved, but susceptibility to physical stress and cracking increases
Solution Approach 1:
The patent changes the physical parameters of the interposer structure by incorporating through-silicon vias, adjusting material compositions, and modifying layer thicknesses. These parameter changes enable the structure to support tighter line spacing for high bandwidth while maintaining adequate mechanical strength and stress resistance through optimized geometric and material parameters.
Data Source
AI summary
Described are semiconductor interposer, and microelectronic device assemblies incorporating such semiconductor interposers. The described interposers include multiple redistribution structures on each side of the core; each of which may include multiple individual redistribution layers. The interposers may optionally include circuit elements, such as passive and/or active circuit. The circuit elements may be formed at least partially within the semiconductor core.