Semiconductor Ion Implantation Corner Loading Effect
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods face challenges in completely implanting ions into the corners of the implant region due to the loading effect, leading to incomplete doping and reduced sensitivity in detecting leakage current.
Innovation Solution
The semiconductor device design includes a substrate with a first type region and a second type region, where the second type region has a square shape with multiple corners and is surrounded by a P-type structure with a ring or line structure and U-shaped structures, along with an isolation structure, facilitating ion implantation and enhancing the detection of leakage current by increasing the contact area between the P-type and N-type regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is performed to dope semiconductors, then impurity atoms are driven into the wafer, but corners of the implant region cannot be implanted with ions due to the loading effect
Solution Approach 1:
The implant region is divided into multiple segments with different geometries. Instead of using a single large rectangular region, the patent uses multiple smaller regions including L-shaped regions and regions with rounded corners. This segmentation allows ions to be implanted more effectively into areas that would otherwise be shadowed by the loading effect, as each segment is positioned to maximize ion exposure while minimizing geometric shadowing.
Solution Approach 2:
The patent employs rounded corners instead of sharp 90-degree corners in the implant region geometry. By using curved boundaries, particularly at the corners of the implant region, the design eliminates the sharp edges that cause severe loading effects. This curvature allows ion beams to access and implant into corner areas that would be blocked by sharp geometric features, thereby improving implantation completeness without compromising manufacturability.
2Ease of manufacture
If the implant region corners are not completely implanted, then manufacturing is easier, but leakage current detection sensitivity is reduced
Solution Approach 1:
The patent applies different geometric qualities to different parts of the implant region. Specifically, the corners of the implant region are designed with rounded geometry rather than sharp corners, creating local quality variations. This local rounding at corner regions ensures complete ion implantation in these critical areas, which directly improves leakage current detection sensitivity, while the rest of the implant region maintains standard geometry for ease of manufacture.
3Area of stationary object
If a square-shaped second type region with multiple corners is used, then contact area between P-type and N-type regions is increased, but ion implantation completeness at corners is reduced
Solution Approach 1:
The patent modifies the square-shaped second type region by rounding its corners. This curvature transformation maintains the overall large contact area between P-type and N-type regions while eliminating the sharp corner geometry that causes incomplete ion implantation. The rounded corners allow ion beams to access and dope the corner regions effectively, thereby achieving both large contact area and complete ion implantation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively addresses the incomplete ion implantation issue by enlarging the contact area between the P-type and N-type regions, thereby improving the sensitivity and detectability of leakage current, and is specifically positioned on a scribe line for wafer testing without affecting other microstructure devices.
Implementation Method 1
Ion implantation is one way of doping semiconductors. The ions to be added are first ionized to enhance the energy or kinetic energy of the impurities. Next, an electric field is used to accelerate the velocity of the ions and a magnetic field changes the direction of motion. Impurities are driven directly into the germanium wafer, allowing impurity atoms to diffuse into the wafer.
Implementation Method 2
Next, an electric field is used to accelerate the velocity of the ions
Implementation Method 3
a magnetic field changes the direction of motion
Implementation Method 4
Impurities are driven directly into the germanium wafer, allowing impurity atoms to diffuse into the wafer.
Data Source
AI summary
The present disclosure provides a method for preparing a semiconductor device. The semiconductor device includes a substrate, a first region, a second region, a third region, a fourth region, a fifth region and a sixth region. The first type region is disposed on the substrate and has a ring structure. The second type region is disposed on the substrate and disposed in the center of the first type region. A plurality of second well regions are formed in the first region, the second region, the fourth region, the fifth region and the sixth region. A plurality of second well regions in the first region, the second region, the fourth region, the fifth region and the sixth region. The first well region, the second well region, the first type region and the second type region are formed by ion implantation.