Semiconductor Device Ion Penetration Barrier

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Solution Overview

Problem

Existing semiconductor devices face reliability issues due to the penetration of external ions, such as sodium ions, which can cause malfunctions and reduce the device's performance, particularly in the termination region where electric potential distribution is critical.

Innovation Solution

The semiconductor device incorporates a specific structure with a cell region and a termination region, featuring a substrate with first and second conductors of varying widths and impurity concentrations, and insulation films to prevent ion penetration, ensuring optimal electric potential distribution and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional trench structures are used in the termination region, then manufacturing is simplified, but external ions can penetrate into the cell region causing reliability issues

Engineering Contradiction:

Improvedevice reliabilityVSAvoidion penetration

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A termination region is introduced as an intermediary zone between the cell region and the external environment. This termination region contains trench conductors and insulation films that act as barriers to prevent external ions from penetrating into the cell region, while still allowing the device to function normally. The trench conductors in the termination region create an additional protective layer that blocks ion penetration paths.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The device structure is segmented into distinct regions: a cell region for active functionality and a termination region for protection. The termination region is further segmented into multiple trenches with conductors arranged at different positions and orientations. This segmentation creates multiple barrier layers that effectively block ion penetration while maintaining device performance.

Inventive Principle:

Principle #1Segmentation

2Reliability

If trench conductors are added to prevent ion penetration, then reliability improves, but device complexity increases

Engineering Contradiction:

Improvedevice reliabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The trench conductors in the termination region serve multiple functions: they act as barriers to prevent ion penetration, maintain electric potential distribution in the termination region, and provide structural support. By combining multiple functions into a single structural element, the overall device complexity is minimized while achieving reliable ion protection.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The trench conductors are strategically positioned only in the termination region where ion penetration is most likely to occur, rather than throughout the entire device. The conductors are arranged with specific positions and orientations tailored to the local requirements of the termination region, optimizing protection while minimizing added complexity.

Inventive Principle:

Principle #3Local quality

3Reliability

If insulation films are used to block ion penetration, then reliability improves, but manufacturing precision requirements increase

Engineering Contradiction:

Improvedevice reliabilityVSAvoidfilm deposition precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

Insulation films are applied as thin protective layers covering the trench conductors and substrate surfaces in the termination region. These films form continuous barriers that effectively block ion penetration paths. The films are deposited to cover all critical surfaces, creating a flexible yet effective protection layer that accommodates the underlying trench structure.

Inventive Principle:

Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces the penetration of foreign substances, enhancing the semiconductor device's reliability by maintaining stable electric potential distribution and preventing ion-induced malfunctions.

Implementation Method 1

insulation films to prevent ion penetration

Methodology Applied

Scientific EffectPhysical barrier: Physical Containment

Implementation Method 2

first and second conductors of varying widths and impurity concentrations, and insulation films to prevent ion penetration, ensuring optimal electric potential distribution

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

a channel stopper electrode arranged in the termination region on the first surface side of the substrate

Methodology Applied

Scientific EffectElectrical field control: Electric Field

Data Source

PatentUS10797130B2Semiconductor device

Publication Date: 2020.10.06 SANKEN ELECTRIC CO LTD

AI summary

A semiconductor device is disclosed that includes a substrate; a first semiconductor region arranged in the cell region on a first surface side of the substrate; a second semiconductor region arranged in a cell region; a channel stopper electrode arranged in a termination region; a first electrode arranged on the first surface and electrically connected to the second semiconductor region; an insulation film arranged between the channel stopper electrode and the first electrode; first conductors arranged inside the insulation film; second conductors arranged on the insulation film; and a second electrode arranged on a second surface side of the substrate. A width of an overlapping portion in a height direction of the first conductor and the second conductor on the first electrode side is larger than a width of an overlapping portion in the height direction of the first and second conductors on the channel stopper electrode side.